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SB860DT/R13

Description
Rectifier Diode, Schottky, 1 Phase, 1 Element, 8A, 60V V(RRM), Silicon, TO-263AB, ROHS COMPLIANT, PLASTIC, TO-263, D2PAK-3
CategoryDiscrete semiconductor    diode   
File Size117KB,3 Pages
ManufacturerPANJIT
Websitehttp://www.panjit.com.tw/
Environmental Compliance

PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values ​​include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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SB860DT/R13 Overview

Rectifier Diode, Schottky, 1 Phase, 1 Element, 8A, 60V V(RRM), Silicon, TO-263AB, ROHS COMPLIANT, PLASTIC, TO-263, D2PAK-3

SB860DT/R13 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
Parts packaging codeD2PAK
package instructionROHS COMPLIANT, PLASTIC, TO-263, D2PAK-3
Contacts4
Reach Compliance Codenot_compliant
ECCN codeEAR99
Other featuresFREE WHEELING DIODE, LOW POWER LOSS
applicationEFFICIENCY
Shell connectionCATHODE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JEDEC-95 codeTO-263AB
JESD-30 codeR-PSSO-G2
Maximum non-repetitive peak forward current150 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current8 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum repetitive peak reverse voltage60 V
surface mountYES
technologySCHOTTKY
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1

SB860DT/R13 Preview

Download Datasheet
SB820D SERIES
SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER
VOLTAGE
FEATURES
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-O utilizing
Flame Retardant Epoxy Molding Compound.
• Exceeds environmental standards of MIL-S-19500/228
• Low power loss, high efficiency.
• Low forward voltage, high current capability
• High surge capacity.
• For use in low voltage,high frequency inverters
free wheeling , and polarlity protection applications.
• In compliance with EU RoHS 2002/95/EC directives
0.110(2.8)
0.236(6.0)
0.197(5.0)
0.026(0.7)
0.011(0.3)
0.055(1.4)
0.039(1.0)
0.108(2.75)
0.092(2.35)
0.35(0.9)MAX.
0.357(9.1)
0.335(8.5)
20 to 60 Volts
CURRENT
8 Amperes
0.409(10.4)
0.387(9.80)
0.189(4.8)
0.137(4.4)
0.055(1.4)
0.047(1.2)
0.418(10.6)
0.378(9.60)
MECHANICAL DATA
• Case: TO-263 / D
2
PAK molded plastic package
• Terminals: Lead solderable per MIL-STD-750, Method 2026
• Polarity: As marked.
• Mounting Position: Any
• Weight: 0.06 ounces, 1.7 grams.
0.108(2.75)
0.092(2.35)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
PA RA ME TE R
Ma xi m um Re c urr e nt P e a k Re ve r s e Vo lt a g e
Ma xi m um RM S Vo lta g e
Ma xi m um D C B lo c k i ng Vo lta g e
Ma xi m um A ve ra g e F o r wa rd C urre nt a t
Tc = 7 5
O
C
P e a k F o r wa rd S urg e C urr e nt :8 .3 ms s i ng le ha lf s i ne -
wa ve s up e ri m p o s e d o n r a te d lo a d (J E D E C me tho d )
Ma xi m um F o rwa r d Vo lta g e a t 8 .0 A
Ma xi m um D C R e ve rs e C ur re nt a t Ra te d
D C B lo c k i ng Vo lta g e
Typ i c a l The rm a l Re s i s ta nc e
Op e r a ti ng J unc ti o n Te m p e ra ture Ra ng e
S to ra g e Te m p e ra tur e Ra ng e
T
J
= 2 5
O
C
T
J
= 1 0 0
O
C
S YMB OL
V
RRM
V
RMS
V
DC
I
F (AV )
I
F S M
V
F
I
R
R
J
C
T
J
T
S TG
- 5 5 to + 1 2 5
0 .5 5
0 .2
50
3
-5 5 to + 1 5 0
- 5 5 to + 1 5 0
O
SB820D SB830D SB840D SB850D SB860D
20
14
20
30
21
30
40
28
40
8
150
0 .7 5
50
35
50
60
42
60
UNITS
V
V
V
A
A
V
mA
C / W
O
C
C
O
NOTE:
Both Bonding and Chip structure are available.
August 19,2010-REV.02
PAGE . 1
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