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PE1605S1Q_R1_00001

Description
Trans Voltage Suppressor Diode,
CategoryDiscrete semiconductor    diode   
File Size264KB,5 Pages
ManufacturerPANJIT
Websitehttp://www.panjit.com.tw/

PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values ​​include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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PE1605S1Q_R1_00001 Overview

Trans Voltage Suppressor Diode,

PE1605S1Q_R1_00001 Parametric

Parameter NameAttribute value
Reach Compliance Codecompliant
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
Base Number Matches1

PE1605S1Q_R1_00001 Preview

Download Datasheet
PPE1605S1Q
ULTRA LOW CAPACITANCE ESD PROTECTION
Voltage
Features
5V
DFN0603-2L
IEC61000-4-2(ESD):
±20kV
Air,
±15kV
Contact
IEC61000-4-4(EFT): 40A(5/50ns)
IEC61000-4-5(Lightning): 3A(8/20uS)
Low leakage current, maximum of 50nA at rated voltage
Low clamping voltage
Lead free in compliance with EU RoHS 2.0
Green molding compound as per IEC 61249 standard
Mechanical Data
Case: Molded plastic, DFN0603-2L
Terminals: Solder plated, solderable per MIL-STD-750,
Method 2026
Approx. Weight: 0.00001 ounces, 0.0004 grams
Maximum Ratings and Thermal Characteristics
(T
A
= 25 C unless otherwise noted)
PARAMETER
ESD IEC61000-4-2(Air)
ESD IEC61000-4-2(Contact)
Typical Thermal Resistance
Operating Junction Temperature Range
Storage Temperature Range
SYMBOL
V
ESD
R
θJA
T
J
T
STG
(1)
o
LIMIT
UNITS
kV
o
±20
±15
500
-55~150
-55~150
C/W
o
o
C
C
January 22,2019-REV.00
Page 1
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