GSBCP68
NPN Transistor
Features
■
■
■
■
■
For general AF applications
High collector current
High current gain
Low collector-emitter saturation voltage
Complementary type:
GSBCP69
(PNP)
SOT-223
1. BASE
2. COLLECTOR
3. EMITTER
Absolute Maximum Ratings
(T
A
=25°C unless otherwise noted）
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current –Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C*
T
J
T
STG
Value
32
20
5
1
1
94
-65 to +150
Unit
V
V
V
A
mW
℃
℃
Electrical
Characteristics
(T
A
=25°C unless otherwise noted）
Parameter
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
Collector-Emitter
Saturation Voltage
Base-Emitter Voltage
Transition Frequency
Collector
Output
Capacitance
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE(1)
h
FE(2)
h
FE(3)
V
CE(sat)
V
BE1
V
BE2
f
T
C
ob
Test Conditions
I
C
=100μA,I
E
=0
I
C
=1mA,I
B
=0
I
E
=100μA ,I
C
=0
V
CB
=25V,I
E
=0
V
EB
=5V,I
C
=0
V
CE
=1V,I
C
=500mA
V
CE
=1V,I
C
=1A
V
CE
=10V,I
C
=5mA
I
C
=1A,I
B
=100mA
V
CE
=10V,I
C
=5mA
V
CE
=1V,I
C
=1A
V
CE
=5V,I
C
=10mA,f=100MHz
V
CB
=5V,I
E
=0,f=1MHz
Min
32
20
5
-
-
85
60
50
-
-
-
40
-
Typ
-
-
-
-
-
-
-
-
-
-
-
-
38
Max
-
-
-
0.1
0.1
375
-
-
0.5
0.68
1
-
-
Unit
V
V
V
μA
μA
-
-
-
V
V
V
MHz
pF
Classification
of
hFE(1)
Rank
Range
GSBCP68-10
85-160
GSBCP68-16
100-250
GSBCP68-25
160-375
1/2
Buy&Sell
京公网安备 11010802033920号
EEWORLD
