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BZX55A22

Description
Zener Diode,
CategoryDiscrete semiconductor    diode   
File Size57KB,4 Pages
ManufacturerYangzhou Yangjie Electronic Technology Co., Ltd.
Websitehttp://www.21yangjie.com/
Yangzhou Yangjie Electronic Technology Co., Ltd. was established on August 2, 2006 with a registered capital of RMB 472 million. In January 2014, the company was listed on the Shenzhen Stock Exchange's Growth Enterprise Market with the stock code 300373. In 2017, the company's operating income was RMB 1.47 billion. The company integrates R&D, production and sales, and is professionally committed to the industrial development of power semiconductor chips and device manufacturing, integrated circuit packaging and testing, etc. The company's main products are various power electronic device chips, power diodes, rectifier bridges, high-power modules, DFN/QFN products, SGT MOS and silicon carbide SBD, silicon carbide JBS, etc. The products are widely used in many fields such as consumer electronics, security, industrial control, automotive electronics, and new energy.
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BZX55A22 Overview

Zener Diode,

BZX55A22 Parametric

Parameter NameAttribute value
Reach Compliance Codeunknown
ECCN codeEAR99
Base Number Matches1

BZX55A22 Preview

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BZX55C Series
Zener diode
Features
1.High reliability
Voltage Range
2.4 to 75 Volts
DO-35
Applications
Voltage stabilization
1.02(26.0)
MIN
.079(2.0)
MAX
.165(4.2)
MAX
Construction
Silicon epitaxial planer
Absoluto Maximum Ratings
0
Tj=25 C
.020(.52)
TYP
1.02(26.0)
MIN
Dimensions in inches and (millimeters)
Parameter
Power dissipation
Z-current
Junction temperature
Storage temperature range
Test Conditions
I=4mm T
L
*25
0
C
Type
Symbol
P
D
l
z
Tj
Tstg
Value
500
P
D
/V
z
175
-65~+175
Unit
mW
mA
0
C
0
C
Maximum Thermal Resistance
Tj=25
0
C
Parameter
Junction ambient
Test Condltions
I=4mm T
L
=constant
Symbol
R
thJA
Value
500
Unit
K/W
Electrcal Characteristics
Tj=25
0
C
Parameter
Forward voltage
Test Conditions
l
F
=200mA
Type
Symbol
V
F
Min
Typ
Max
1.5
Unit
V
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