GBU810 datasheet, PDF - EEWORLD Datasheet

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GBU810: DescriptionSingle Phase 8.0A Silicon Bridge Rectifiers Single Phase 8.0A Silicon Bridge Rectifiers; CategoryDiscrete semiconductor; File Size368KB，2 Pages; ManufacturerYangzhou Yangjie Electronic Technology Co., Ltd.; Websitehttp://www.21yangjie.com/; Environmental Compliance; Yangzhou Yangjie Electronic Technology Co., Ltd. was established on August 2, 2006 with a registered capital of RMB 472 million. In January 2014, the company was listed on the Shenzhen Stock Exchange's Growth Enterprise Market with the stock code 300373. In 2017, the company's operating income was RMB 1.47 billion. The company integrates R&D, production and sales, and is professionally committed to the industrial development of power semiconductor chips and device manufacturing, integrated circuit packaging and testing, etc. The company's main products are various power electronic device chips, power diodes, rectifier bridges, high-power modules, DFN/QFN products, SGT MOS and silicon carbide SBD, silicon carbide JBS, etc. The products are widely used in many fields such as consumer electronics, security, industrial control, automotive electronics, and new energy.

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GBU810 Overview

Single Phase 8.0A Silicon Bridge Rectifiers Single Phase 8.0A Silicon Bridge Rectifiers

Features

Product Name: Single Phase 8.0A Silicon Bridge Rectifiers

Product model: GBU810

product features:

Ideal for printed circuit board

Reliable low cost construction

Plastic material has Underwriters Laboratory Flammability Classification 94V-0

Surge overload rating to 150 amperes peak

High temperature soldering guaranteed:

250℃ / 10 seconds / 0.375” ( 9.5mm )

lead length at 5 lbs., ( 2.3 kg ) tension

Mechanical data:

Case: Molded plastic body

Terminals:Leads solderable per MIL-STD-750,Method 2026

Weight:0.3 ounce.8.0 grams

Mounting torque:5 in.lbs.Max

Maximum Ratings and Electrical Characteristics:

Rating at 25℃ ambient temperature unless otherwise specified.

Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%

product data:

Maximum Repetitive Peak Reverse Voltage VRRM Maximum reverse peak voltage: 1000V

Maximum RMS Voltage VRMS Voltage effective value: 700V

Maximum DC blocking Voltage VDC Maximum DC blocking voltage: 1000V

Maximum Average Forward Rectified Current IF(AV) Maximum forward current: 8.0 A

Peak Forward Surge Current, 8.3 ms Single Half Sine-wave Super imposed on Rated Load IFSM Maximum forward surge current: 200 A

Maximum Instantaneous Forward Voltage Drop Per Leg @ 6.0A VF Maximum forward voltage drop: 1.1 V

Maximum Reverse Current at Rated @TA=25℃ IR Maximum reverse leakage current: 5.0μA

DC blocking voltage @TA= 125℃ IR Maximum reverse leakage current: 500μA

Typical Thermal Resistance (Note) RθJA Thermal resistance coefficient: 21.0℃/W ; RθJC Thermal resistance coefficient: 4.0℃/W

Operating Temperature Range TJ Operating Junction Temperature: -55 to +150 ℃

Storage Temperature Range TSTG Storage Temperature Range: -55 to +150 ℃

Mounting Torque TOR ：8 kg.cm

Package: GBU

GBU810 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Yangzhou Yangjie Electronic Technology Co., Ltd.
Reach Compliance Code	unknown
Is Samacsys	N
Other features	UL RECOGNIZED
Shell connection	ISOLATED
Configuration	BRIDGE, 4 ELEMENTS
Diode component materials	SILICON
Diode type	BRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)	1 V
JESD-30 code	R-PSFM-T4
Maximum non-repetitive peak forward current	175 A
Number of components	4
Phase	1
Number of terminals	4
Maximum operating temperature	150 °C
Minimum operating temperature	-55 °C
Maximum output current	3.2 A
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Maximum repetitive peak reverse voltage	1000 V
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
Base Number Matches	1

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