SBR2506

Features

Product Name: SILICON / GLASS PASSIVATED THREE PHASE BRIDGE RECTIFIERS Silicon / Glass Passivated Three-Phase Bridge Rectifier

Product model: SBR2506

product features:

Diffused Junction

Low Forward Voltage Drop

High Current Capability

High Reliability

High Surge Current Capability

Ideal for Printed Circuit Boards

Mechanical data:

Case: Epoxy Case with Heat Sink Interally

Mounted in the Bridge Encapsulation

Terminals:Plated Leads Solderable per

MIL-STD_202.Method 208

Polarity: As Marked on Body

Weight:20 grams (apprex.)

Mounting Position:

Bolt Down on Heatsink With Silicone Thermal

Compound Between Bridge and Mouting Surface

For Maximun Heat Transfer Efficiency

Mounting Torque:20 in Ibs.Max.

Marking:Type Number

Maximum Ratings and Electrical Characteristics:

Rating at 25℃ ambient temperature unless otherwise specified.

Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%

product data:

Peak Repetitive Reverse Voltage VRRM Maximum reverse peak voltage: 600V

Working Peak Reverse Voltage VRWM Working Peak Reverse Voltage: 600V

DC Blocking Voltage VR DC blocking voltage: 600V

Peak Non-Repetitive Reverse Voltage VRSM Peak reverse voltage: 725V

RMS Reverse Voltage VR(RMS) Reverse voltage effective value: 420V

Maximum Average Forward Rectified Current @TC = 100℃ I(AV) Maximum forward current: 25 A

Non-Repetitive Peak Forward Surge Current Non-Repetitive Peak Forward Surge Current:

(No Voltage Reapplid t=8.3ms at 60Hz) IFSM ：375 A

(No Voltage Reapplid t=10ms at 50Hz) IFSM ：360 A

(100% Reapplid t=8.3ms at 60Hz) IFSM ：314A

(100% Reapplid t=10ms at 50Hz) IFSM ：300 A

(I^2)t Rating for fusing

(No Voltage Reapplid t=8.3ms at 60Hz) (I^2)t ：580 (A^2)S

(No Voltage Reapplid t=10ms at 50Hz) (I^2)t ：635 (A^2)S

(100% Reapplid t=8.3ms at 60Hz) (I^2)t ：410 (A^2)S

(100% Reapplid t=10ms at 50Hz) (I^2)t ：450(A^2)S

Forward Voltage (per element) @ TJ=25℃,@IFM=40Apk per single junction VF ：1.2V

Peak Reverse Current (per leg) @ TJ=25℃ IR Maximum reverse leakage current: 10μA

At Rated DC Blocking Voltage @ TJ = 125℃ IR Maximum Reverse Leakage Current: 5.0mA

RMS Isolation Voltage from Case to Lead VISO ：2500V

Operating Temperature Range TJ Operating Junction Temperature: -40 to +125 ℃

Storage Temperature Range TSTG Storage Temperature Range: -40 to +150 ℃

Thermal Resistance Junction to Case at DC Operation per Bridge RθJC Thermal resistance coefficient: 1.42K/W

Thermal Resistance Case to Heatsink Mounting Surface,Smooth,Flat and Greased RθCS ：0.2K/W

Package: SKBPC