PJSD05ULFN2T/R7 datasheet, PDF

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PJSD05ULFN2T/R7: DescriptionTrans Voltage Suppressor Diode, 200W, 5V V(RWM), Unidirectional, 1 Element, Silicon, ROHS COMPLIANT, PLASTIC, DFN-2; CategoryDiscrete semiconductor diode; File Size120KB，4 Pages; ManufacturerPANJIT; Websitehttp://www.panjit.com.tw/; Environmental Compliance; PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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PJSD05ULFN2T/R7 Overview

Trans Voltage Suppressor Diode, 200W, 5V V(RWM), Unidirectional, 1 Element, Silicon, ROHS COMPLIANT, PLASTIC, DFN-2

PJSD05ULFN2T/R7 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	PANJIT
Parts packaging code	DFN
package instruction	ROHS COMPLIANT, PLASTIC, DFN-2
Contacts	2
Reach Compliance Code	compliant
ECCN code	EAR99
Minimum breakdown voltage	6 V
Configuration	SINGLE
Diode component materials	SILICON
Diode type	TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 code	R-PBCC-N2
Maximum non-repetitive peak reverse power dissipation	200 W
Number of components	1
Number of terminals	2
Maximum operating temperature	150 °C
Minimum operating temperature	-55 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	CHIP CARRIER
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
polarity	UNIDIRECTIONAL
Maximum repetitive peak reverse voltage	5 V
surface mount	YES
technology	AVALANCHE
Terminal form	NO LEAD
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
Base Number Matches	1

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PJSD05ULFN2

SINGLE LINE LOW CAPACITANCE TVS DIODE FOR ESD PROTECTION IN

PORTABLE

ELECTRONICS

VOLTAGE

FEATURES

5 Volts

POWER

200 Watts

DFN 2L

0.042(1.05)

0.037(0.95)

Unit

：

inch(mm)

• Small package for use in portable electronics

• Suitable replacement for MLV’S in ESD protection applications

• Low clamping voltage and leakage current

•

Lead free in comply with EU RoHS 2002/95/EC directives.

• Green molding compound as per IEC61249 Std. . (Halogen Free)

APPLICATIONS

• Instrumentation

• Portable electronics

• Mobile phone and accessories

0.022(0.55)

0.017(0.45)

0.026(0.65)

0.022(0.55)

• 200 Watts peak pules power( tp=8/20

s)

0.002(0.05)MAX.

0.013(0.32)

0.008(0.22)

0.014(0.36)

• Case: DFN 2L plastic

• Terminals : Solderable per MIL-STD-750,Method 2026

• Approx. Weight: 0.00004 ounces, 0.0011grams

• Marking : BU

PIN NO.1

IDENTIFICATION

MAXIMUM RATINGS AND ELECTRICAL CHATACTERISTICS

ABSOLUTE MAXIMUM RATING

Rating

Peak Pulse Power (tp=8/20

s)

Max Peak Pulse Current 8/20s

ESD Voltage

Operating Junction and Storage Temperature Range

ELECTRICAL CHARA CTERISTICS

Symbol

PPM

ESD

STG

Value

200

-55 to +150

0.022(0.55)

0.017(0.45)

MECHANICAL DATA

Units

Parameter

Reverse Stand-Off Voltage

Reverse Breakdown Voltage

Reverse Leakage Current

Clamping Voltage(8/20

s)

Clamping Voltage(8/20

s)

Off State Junction

Capacitance

Symbol

RWM

Conditions

=1mA

=5V

=5A

=15A

0Vdc Bias=f=1MHz

Min.

6.0

Typ.

7.4

9.0

11.5

0.28

Max.

0.35

Units

A

REV.0.5-AUG.11.2009

PAGE . 1

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