BLF7G22LS-250P,112 datasheet, PDF

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BLF7G22LS-250P,112: DescriptionPower Field-Effect Transistor, 65A I(D), 65V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, CEARMIC PACKAGE- 4; CategoryDiscrete semiconductor The transistor; File Size2MB，14 Pages; ManufacturerAmpleon; Websitehttp://www.ampleon.com/; Environmental Compliance; Ampleon was founded in 2015, but has been leading the industry in RF power for more than 50 years. Looking to the future, the company hopes to make the world a better place by innovating with advanced LDMOS and GaN technologies in high-frequency applications. With more than 1,600 employees worldwide, Ampleon is committed to enabling its customers to successfully use its RF power products through close collaboration and partnerships, innovative capabilities and excellent execution. Its consistent and innovative product portfolio brings best-in-class products and solutions for 4G LTE and 5G NR infrastructure, industrial, scientific, medical, broadcast, aerospace and defense applications.

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BLF7G22LS-250P,112 Overview

Power Field-Effect Transistor, 65A I(D), 65V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, CEARMIC PACKAGE- 4

BLF7G22LS-250P,112 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
package instruction	FLATPACK, R-CDFP-F4
Reach Compliance Code	unknown
ECCN code	EAR99
Factory Lead Time	26 weeks
Shell connection	SOURCE
Configuration	COMMON SOURCE, 2 ELEMENTS
Minimum drain-source breakdown voltage	65 V
Maximum drain current (ID)	65 A
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-CDFP-F4
Number of components	2
Number of terminals	4
Operating mode	ENHANCEMENT MODE
Package body material	CERAMIC, METAL-SEALED COFIRED
Package shape	RECTANGULAR
Package form	FLATPACK
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Guideline	IEC-60134
surface mount	YES
Terminal form	FLAT
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Base Number Matches	1

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BLF7G22L-250P;

BLF7G22LS-250P

Power LDMOS transistor

Rev. 4 — 1 September 2015

Product data sheet

1. Product profile

1.1 General description

250 W LDMOS power transistor for base station applications at frequencies from

2110 MHz to 2170 MHz.

Table 1.

Typical performance

Typical RF performance at T

case

= 25



C in a common source class-AB production test circuit.

Mode of operation

2-carrier W-CDMA

[1]

(MHz)

2110 to 2170

(mA)

1900

(V)

L(AV)

(W)

(dB)

18.5



(%)

ACPR

(dBc)

30

[1]

Test signal: 3GPP; test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF; carrier spacing

5 MHz.

1.2 Features and benefits



Excellent ruggedness

High efficiency

Low R

providing excellent thermal stability

Designed for low memory effects providing excellent pre-distortability

Internally matched for ease of use

Integrated ESD protection

Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances

(RoHS)

1.3 Applications



RF power amplifiers for W-CDMA base stations and multi carrier applications in the

2110 MHz to 2170 MHz frequency range

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