BLF642,112 datasheet, PDF - EEWORLD Datasheet

Datasheet> All Categories > Discrete semiconductor> The transistor> BLF642,112

BLF642,112: DescriptionRF Power Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT, CERAMIC PACKAGE-2; CategoryDiscrete semiconductor The transistor; File Size1MB，12 Pages; ManufacturerAmpleon; Websitehttp://www.ampleon.com/; Environmental Compliance; Ampleon was founded in 2015, but has been leading the industry in RF power for more than 50 years. Looking to the future, the company hopes to make the world a better place by innovating with advanced LDMOS and GaN technologies in high-frequency applications. With more than 1,600 employees worldwide, Ampleon is committed to enabling its customers to successfully use its RF power products through close collaboration and partnerships, innovative capabilities and excellent execution. Its consistent and innovative product portfolio brings best-in-class products and solutions for 4G LTE and 5G NR infrastructure, industrial, scientific, medical, broadcast, aerospace and defense applications.

Download Datasheet Parametric View All

BLF642,112 Overview

RF Power Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT, CERAMIC PACKAGE-2

BLF642,112 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
package instruction	FLANGE MOUNT, R-CDFM-F2
Reach Compliance Code	unknown
ECCN code	EAR99
Factory Lead Time	26 weeks
Shell connection	SOURCE
Configuration	SINGLE
Minimum drain-source breakdown voltage	65 V
FET technology	METAL-OXIDE SEMICONDUCTOR
highest frequency band	L BAND
JESD-30 code	R-CDFM-F2
Number of components	1
Number of terminals	2
Operating mode	ENHANCEMENT MODE
Package body material	CERAMIC, METAL-SEALED COFIRED
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Guideline	IEC-60134
surface mount	YES
Terminal form	FLAT
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Base Number Matches	1

BLF642,112 Preview

Download Datasheet

View All

BLF642

Broadband power LDMOS transistor

Rev. 3 — 1 September 2015

Product data sheet

1. Product profile

1.1 General description

A 35 W LDMOS RF power transistor for broadcast transmitter and industrial applications.

The transistor is suitable for the frequency range HF to 1400 MHz. The excellent

ruggedness and broadband performance of this device makes it ideal for digital

applications.

Table 1.

Typical performance

RF performance at T

= 25



C in a common source test circuit.

Mode of operation

CW, class-AB

2-tone, class-AB

(MHz)

1300

(V)

(W)

17.5

(dB)



(%)

IMD

(dBc)

28

1.2 Features and benefits



CW performance at 1300 MHz, a drain-source voltage V

of 32 V and a quiescent

drain current I

= 0.2 A :



Average output power = 35 W



Power gain = 19 dB



Drain efficiency = 63 %



2-tone performance at 1300 MHz, a drain-source voltage V

of 32 V and a quiescent

drain current I

= 0.2 A :



Average output power = 17.5 W



Power gain = 19 dB



Drain efficiency = 48 %



Intermodulation distortion =

28

dBc



Integrated ESD protection



Excellent ruggedness



High power gain



High efficiency



Excellent reliability



Easy power control



Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances

(RoHS)

Recommended Resources

Electric mixer intermittent operation controller circuit

Transistor DC regulated power supply circuit

Flowmeter signal conversion circuit

555 multi-channel touch audio alarm circuit

MAX038 multiple waveform oscillator

LM388 bridge power amplifier

How to make a constant current source using a transistor: How do you make a constant current source using a triode? Thank you very much!...; 雷雨 Analog electronics

Why is the reset light on my TWR-K40X256 development board always on?: Please help me, why is the reset light on this board always on? Is the chip locked? I am using CW10.2, and I am not sure if I have downloaded the program successfully using the USB interface. Please h...; cuimeng1987 NXP MCU

Common problems and solutions of access control system: [align=left][b]Common problems and solutions for access control systems[/b][/align] [b]Fault phenomenon 1: [/b]After the access control device is connected, it cannot communicate with the computer usi...; jcdkj.tcsw.cn Integrated technical exchanges

【Goodbye 2021, Hello 2022】After a long journey, I feel younger: [i=s]This post was last edited by lb8820265 on 2022-1-23 23:11[/i]I'm 30 years old before I know it. I feel like I'm still a kid. I always like to try new things. I also hope I can stay younger and yo...; lb8820265 Talking

How to intercept system messages: Now I need to make a key backlight driver. I want to intercept the key information without affecting the key message transmission. I hope you can help me....; xuchenglong Embedded System

The relationship between writing your own WIFI connection program and Microsoft's built-in connection program: In the "Advanced Settings" of Microsoft's own connection program, select "Use Windows to configure wireless settings", then the WIFI connection program you wrote can be connected and the following mes...; djxgirl Embedded System

Popular Components