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M12L32162A

Description
1M x 16Bit x 2Banks Synchronous DRAM
File Size758KB,29 Pages
ManufacturerESMT
Websitehttp://www.esmt.com.tw/
Elite Semiconductor Memory Technology Inc. (ESMT) is a professional IC design company founded by Dr. Hu Zhao in June 1998. Its headquarters is located in Hsinchu Science Park, Taiwan. The company's main business includes research, development, manufacturing, sales and related technical services of IC products. It was listed on the Taiwan Stock Exchange in March 2002.
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M12L32162A Overview

1M x 16Bit x 2Banks Synchronous DRAM

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ESMT
SDRAM
M12L32162A
1M x 16Bit x 2Banks
Synchronous DRAM
FEATURES
JEDEC standard 3.3V power supply
LVTTL compatible with multiplexed address
Dual banks operation
MRS cycle with address key programs
-
CAS Latency (2 & 3 )
-
Burst Length (1, 2, 4, 8 & full page)
-
Burst Type (Sequential & Interleave)
All inputs are sampled at the positive going edge of the
system clock
Burst Read Single-bit Write operation
DQM for masking
Auto & self refresh
64ms refresh period (4K cycle)
GENERAL DESCRIPTION
The M12L32162A is 33,554,432 bits synchronous high
data rate Dynamic RAM organized as 2 x 1,048,576 words
by 16 bits, fabricated with high performance CMOS
technology. Synchronous design allows precise cycle
control with the use of system clock I/O transactions are
possible on every clock cycle. Range of operating
frequencies, programmable burst length and programmable
latencies allow the same device to be useful for a variety of
high bandwidth, high performance memory system
applications.
ORDERING INFORMATION
Product ID
M12L32162A-6TG
M12L32162A-7TG
Max Freq.
Package
Comments
Pb-free
Pb-free
Pb-free
Pb-free
Pb-free
Pb-free
M12L32162A-5.5TG 183MHz 54Pin TSOP(II)
166MHz 54Pin TSOP(II)
143MHz 54Pin TSOP(II)
54 Ball BGA
M12L32162A-5.5BG 183MHz
M12L32162A-6BG
M12L32162A-7BG
166MHz
143MHz
54 Ball BGA
54 Ball BGA
PIN CONFIGURATION (TOP VIEW)
54 PIN TSOP(II)
V
DD
DQ0
V
DDQ
DQ1
DQ2
V
SSQ
DQ3
DQ4
V
DDQ
DQ5
DQ6
V
SSQ
DQ7
V
DD
LDQM
WE
CAS
RAS
CS
NC
BA
A
10
/AP
A
0
A
1
A
2
A
3
V
DD
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
54
53
52
51
50
49
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
V
SS
DQ15
V
S SQ
DQ14
DQ13
V
D DQ
DQ12
DQ11
V
S SQ
DQ10
DQ9
V
D DQ
DQ8
V
SS
NC
UDQM
CLK
CKE
NC
A
11
A
9
A
8
A
7
A
6
A
5
A
4
V
SS
54 Ball BGA(8mmx8mm)
1
A
B
C
D
E
F
G
H
J
V
SS
DQ14
DQ12
2
DQ15
DQ13
DQ11
3
V
SSQ
4
5
6
7
V
DDQ
8
DQ0
DQ2
DQ4
DQ6
9
V
DD
DQ1
V
DDQ
V
SSQ
V
DDQ
V
SSQ
V
DDQ
V
SSQ
DQ3
DQ5
DQ10
DQ9
DQ8
NC
CLK
A11
V
SS
V
DD
LDQM
DQ7
WE
CS
A10
V
DD
UDQM
CKE
A9
CAS
BA
A0
A9
RAS
NC
NC
A8
V
SS
A7
A5
A6
A4
A1
A2
Elite Semiconductor Memory Technology Inc.
Publication Date
:
Mar. 2009
Revision
:
1.2
1/29
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