GAM2502 datasheet, PDF - EEWORLD Datasheet

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GAM2502: DescriptionRectifier Diode, 1 Element, 25A, 200V V(RRM),; CategoryDiscrete semiconductor diode; File Size119KB，2 Pages; ManufacturerGood-Ark; Environmental Compliance; Suzhou Gotech is a complete and comprehensive manufacturer of design, manufacturing, packaging and sales in the domestic semiconductor discrete device diode industry. From the independent development of front-end chips to various packaging technologies of back-end finished products, it has formed a complete industrial chain. The main products include leadless integrated circuit products and discrete device products with the latest packaging technology, automotive rectifier diodes, power modules, rectifier diode chips, silicon rectifier diodes, switching diodes, Zener diodes, micro bridge piles, military fuses, photovoltaic bypass modules, etc., with a total of more than 50 series and more than 1,500 varieties. The products are widely used in many fields such as aerospace, automobiles, green lighting, IT, household appliances and power supply devices for large equipment. Design and develop silver paste for solar cells and various electronic pastes, and develop and mass produce various new sensors in the field of the Internet of Things.

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GAM2502 Overview

Rectifier Diode, 1 Element, 25A, 200V V(RRM),

GAM2502 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Reach Compliance Code	compliant
ECCN code	EAR99
Configuration	SINGLE
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	1 V
Maximum non-repetitive peak forward current	300 A
Number of components	1
Maximum operating temperature	175 °C
Maximum output current	25 A
Maximum repetitive peak reverse voltage	200 V
surface mount	NO
Base Number Matches	1

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GAM2501 thru GAM2512

High Voltage Press Fit Diodes For Automotive

Voltage Range 100 to 1200Volts Current 25 Amps

Technical Specification:

Features:

Low leakage

Low forward voltage drop

High current capability

High forward surge current capability

Mechanical Data:

Technology: Gpp chip or cell, Cell with vacuum soldered

Case: Copper case

Polarity: As marked of case bottom

Lead: Plated lead, solderable per MIL-STD-202E method 208C

Mounting: Press Fit

Weight: 0.30 ounces, 8.5 grams

Dimensions in inches and (millimeters)

Maximum Ratings and Electrical Characteristics

Rating at 25

C ambient temperature unless otherwise specified.

Single phase, half wave, 60Hz, resistive or inductive load.

For capacitive load derate current by 20%.

Parameters

Maximum repetitive peak reverse voltage

Maximum RMS voltage

Maximum DC blocking voltage

Maximum Average rectified forward current at T

=105

Peak forward surge current 8.3mS single half sine-wave

superimposed on rated load (JEDEC Method)

Rating for fusing (t<8.3mS)

Maximum instantaneous forward voltage drop at 35A

Maximum DC reverse current

at rated DC blocking voltage

Typical thermal resistance

Operating and storage temperature range

Notes:

=25

=150

Symbols

RRM

RMS

(AV)

FSM

, T

STG

GAM2501

GAM2502

GAM2504

GAM2506

GAM2508

GAM2510

GAM2512

Units

Volts

Amps

Volts

100

200

140

200

400

280

400

600

420

600

300

374

1.0

5.0

0.5

1.0

-65 to +175

800

560

800

1000

700

1000

1200

840

1200

C/W

1. Enough heatsink must be considered in application.

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