GARS251 datasheet, PDF - EEWORLD Datasheet

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GARS251: DescriptionRectifier Diode, 1 Phase, 1 Element, 25A, 100V V(RRM), Silicon,; CategoryDiscrete semiconductor diode; File Size118KB，2 Pages; ManufacturerGood-Ark; Environmental Compliance; Suzhou Gotech is a complete and comprehensive manufacturer of design, manufacturing, packaging and sales in the domestic semiconductor discrete device diode industry. From the independent development of front-end chips to various packaging technologies of back-end finished products, it has formed a complete industrial chain. The main products include leadless integrated circuit products and discrete device products with the latest packaging technology, automotive rectifier diodes, power modules, rectifier diode chips, silicon rectifier diodes, switching diodes, Zener diodes, micro bridge piles, military fuses, photovoltaic bypass modules, etc., with a total of more than 50 series and more than 1,500 varieties. The products are widely used in many fields such as aerospace, automobiles, green lighting, IT, household appliances and power supply devices for large equipment. Design and develop silver paste for solar cells and various electronic pastes, and develop and mass produce various new sensors in the field of the Internet of Things.

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GARS251 Overview

Rectifier Diode, 1 Phase, 1 Element, 25A, 100V V(RRM), Silicon,

GARS251 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Good-Ark
package instruction	O-PEDB-N2
Reach Compliance Code	compliant
ECCN code	EAR99
application	GENERAL PURPOSE
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	1.1 V
JESD-30 code	O-PEDB-N2
Maximum non-repetitive peak forward current	400 A
Number of components	1
Phase	1
Number of terminals	2
Maximum operating temperature	175 °C
Minimum operating temperature	-65 °C
Maximum output current	25 A
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	DISK BUTTON
Maximum repetitive peak reverse voltage	100 V
Maximum reverse current	5 µA
surface mount	YES
Terminal form	NO LEAD
Terminal location	END

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GAR251 thru GAR256 / GARS251 thru GARS256

Button Diodes

Current 25 Amps

Voltage Range 100 to 600Volts

Technical Specification:

Features:

Low leakage

Low forward voltage drop

High current capability

High forward surge current capability

Mechanical Data:

Technology: Vacuum soldered.

Case: Transfer molded plastic.

Polarity: Color ring denotes cathode.

Lead: Plated lead, solderable per MIL-STD-202E method 208C

Mounting position: Any

Weight: 0.064 ounces, 1.8 grams

Dimensions in inches and (millimeters)

Maximum Ratings and Electrical Characteristics

Rating at 25

C ambient temperature unless otherwise specified.

Single phase, half wave, 60Hz, resistive or inductive load.

For capacitive load derate current by 20%.

Parameters

Maximum repetitive peak reverse voltage

Maximum RMS voltage

Maximum DC blocking voltage

Maximum Average rectified forward current at T

=105

Peak forward surge current 8.3mS single half sine-wave

superimposed on rated load (JEDEC Method)

Rating for fusing (t<8.3mS)

Maximum instantaneous forward voltage drop at 100A

Maximum DC reverse current

at rated DC blocking voltage

Typical thermal resistance

Operating and storage temperature range

Notes:

=25

=150

Symbols

RRM

RMS

(AV)

FSM

, T

STG

GAR251

GARS251

100

GAR252

GARS252

200

140

200

GAR253

GARS253

300

210

300

400

664

1.10

5.0

450

1.0

-65 to +175

GAR254

GARS254

400

280

400

GAR256

GARS256

600

420

600

Units

Volts

Amps

Volts

C/W

1. Enough heatsink must be considered in application.

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