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KBP10

Description
Bridge Rectifier Diode, 2A, 1000V V(RRM),
CategoryDiscrete semiconductor    diode   
File Size48KB,2 Pages
ManufacturerGood-Ark
Environmental Compliance
Suzhou Gotech is a complete and comprehensive manufacturer of design, manufacturing, packaging and sales in the domestic semiconductor discrete device diode industry. From the independent development of front-end chips to various packaging technologies of back-end finished products, it has formed a complete industrial chain. The main products include leadless integrated circuit products and discrete device products with the latest packaging technology, automotive rectifier diodes, power modules, rectifier diode chips, silicon rectifier diodes, switching diodes, Zener diodes, micro bridge piles, military fuses, photovoltaic bypass modules, etc., with a total of more than 50 series and more than 1,500 varieties. The products are widely used in many fields such as aerospace, automobiles, green lighting, IT, household appliances and power supply devices for large equipment. Design and develop silver paste for solar cells and various electronic pastes, and develop and mass produce various new sensors in the field of the Internet of Things.
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KBP10 Overview

Bridge Rectifier Diode, 2A, 1000V V(RRM),

KBP10 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerGood-Ark
package instructionR-PSIP-W4
Reach Compliance Codecompliant
Minimum breakdown voltage1000 V
ConfigurationBRIDGE, 4 ELEMENTS
Diode component materialsSILICON
Diode typeBRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)1.1 V
JESD-30 codeR-PSIP-W4
Maximum non-repetitive peak forward current50 A
Number of components4
Phase1
Number of terminals4
Maximum operating temperature125 °C
Minimum operating temperature-55 °C
Maximum output current2 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Maximum repetitive peak reverse voltage1000 V
surface mountNO
Terminal formWIRE
Terminal locationSINGLE

KBP10 Preview

Download Datasheet
KBP005 THRU KBP10
SINGLE-PHASE SILICON BRIDGE
Reverse Voltage -
50 to 1000 Volts
Forward Current -
2.0 Amperes
Features
Surge overload rating - 50 amperes peak
Ideal for printed circuit board
Plastic material has Underwriters Laboratory
Flammability Classification 94V-0
Mounting Position: Any
Lead: Silver plated copper lead
D IM E N S IO N S
D IM
A
B
C
D
E
F
G
in c h e s
M in .
-
0 .7 5
-
-
-
-
M ax.
0 .5 0 4
-
0 .6 9 3
0 .2 5
0 .1 2 5
0 .1 5
0 .3 2 Ty p .
M in .
-
1 9 .0
-
-
-
-
0 .8 Ty p .
mm
M ax.
1 2 .8
-
1 7 .6
6 .4
3 .2
3 .8
N o te
Maximum Ratings and Electrical Characteristics
Ratings at 25 ambient temperature unless otherwise specified. Resistive or inductive load, 60Hz.
For capacitive load, derate current by 20%.
Symbols
KBP005
KBP01
KBP02
KBP04
KBP06
KBP08
KBP10
Units
Maximum repetitive peak reverse voltage
Maximum RMS bridge input voltage
Maximum DC blocking voltage
Maximum average forward rectified output current
at T
A
=50
Peak forward surge current, 8.3mS single
half sine-wave superimposed on rated load
Maximum forward Voltage drop per bridge element
at 1.0A peak
Maximum DC reverse current at rated
DC blocking voltage per element
Maximum DC reverse current at rated
DC blocking voltage per element
Operating temperature range
Storage temperature range
T
A
=100
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
V
F
I
R
I
R
T
J
T
STG
50
35
50
100
70
100
200
140
200
400
280
400
2.0
50.0
1.0
10.0
1.0
-55 to +125
-55 to +150
600
420
600
800
560
800
1000
700
1000
Volts
Volts
Volts
Amps
Amps
Volt
A
mA
1
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