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2N7002T/R7

Description
Small Signal Field-Effect Transistor, 0.25A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT PACKAGE-3
CategoryDiscrete semiconductor    The transistor   
File Size157KB,5 Pages
ManufacturerPANJIT
Websitehttp://www.panjit.com.tw/
Environmental Compliance

PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values ​​include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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2N7002T/R7 Overview

Small Signal Field-Effect Transistor, 0.25A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT PACKAGE-3

2N7002T/R7 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
package instructionROHS COMPLIANT PACKAGE-3
Contacts3
Reach Compliance Codecompli
ECCN codeEAR99
Other featuresULTRA-LOW RESISTANCE
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage60 V
Maximum drain current (ID)0.25 A
Maximum drain-source on-resistance5 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)5 pF
JESD-30 codeR-PDSO-G3
JESD-609 codee3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
surface mountYES
Terminal surfaceMatte Tin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1

2N7002T/R7 Preview

Download Datasheet
2N7002
60V N-Channel Enhancement Mode MOSFET
FEATURES
• R
DS(ON)
, V
GS
@4.5V,I
DS
@75mA=7.5Ω
• Advanced Trench Process Technology
• High Density Cell Design For Ultra Low On-Resistance
• Specially Designed for Battery Operated Systems, Solid-State Relays
Drivers : Relays, Displays, Lamps, Solenoids, Memories, etc.
0.056(1.40)
0.047(1.20)
0.120(3.04)
0.110(2.80)
0.006(0.15)MIN.
• R
DS(ON)
, V
GS
@10V,I
DS
@500mA=5Ω
0.103(2.60)
0.044(1.10)
0.035(0.90)
0.020(0.50)
0.013(0.35)
0.079(2.00)
0.070(1.80)
0.008(0.20)
0.003(0.08)
MECHANICALDATA
• Case: SOT-23 Package
• Terminals : Solderable per MIL-STD-750,Method 2026
• Apporx. Weight : 0.0003 ounces, 0.0084grams
• Marking : S72
0.004(0.10)MAX.
Maximum Ratings and Thermal Characteristics (T
A
=25
O
C unless otherwise noted )
PA RA ME TE R
D ra i n-S o urc e Vo lt a g e
G a t e - S o urc e Vo lt a g e
C o nt i nuo us D r a i n C urr e nt
P uls e d D ra i n C urr e nt
1)
S ymb o l
V
DS
V
GS
I
D
I
D M
T
A
= 2 5
O
C
T
A
= 7 5
O
C
P
D
T
J
,T
S TG
R
θJ
A
L i mi t
60
+20
250
1300
350
210
-5 5 to + 1 50
357
0.086(2.20)
Uni t s
V
V
mA
mA
mW
O
M a xi mum P o we r D i s s i p a t i o n
O p e ra t i ng J unc ti o n a nd S t o ra g e Te mp e ra t ur e Ra ng e
Junction-to Ambient Thermal Resistance(PCB mounted)
2
C
O
C /W
Note: 1. Maximum DC current limited by the package
2. Surface mounted on FR4 board, t < 10 sec
PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE
November 01,2010-REV.02
PAGE . 1
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