LITE-ON
SEMICONDUCTOR
MBRF20100CT2
SCHOTTKY BARRIER RECTIFIERS
REVERSE VOLTAGE
- 100
Volts
FORWARD CURRENT
- 20
Amperes
FEATURES
Metal of silicon rectifier,majority carrier conducton
Guard ring for transient protection
Low power loss, high efficiency
High current capability, low VF
High surge capacity
Plastic package has UL flammability classification 94V-0
For use in low voltage,high frequency inverters,free
whelling,and polarity protection applications
B
K
ITO-220AB
M
ITO-220AB
DIM.
MIN.
MAX.
A
B
C
A
15.50
10.0
3.00
9.00
2.90
13.46
1.15
2.40
0.75
16.50
10.40
3.50
9.30
3.60
14.22
1.70
2.70
1.00
C
D
D
PIN
1
E
2
3
E
F
J
F
G
G
H
I
J
K
MECHANICAL DATA
Case : ITO-220AB molded plastic
Polarity : As marked on the body
Weight : 0.06 ounces, 1.70 grams
Mounting position : Any
Max. mounting torque = 0.5 N.m (5.1 Kgf.cm)
I
H
H
L
N
PIN 1
PIN 3
PIN 2
0.45
0.70
3.00
3.30
4.36
4.77
L
M
2.48
2.80
2.80
N
2.50
All Dimensions in millimeter
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
℃
ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
UNIT
V
V
V
A
CHARACTERISTICS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward
Rectified Current (See Fig.1)
T
C
=120 C
Peak Forward Surge Current
8.3ms single half sine-wave
superimposed on rated load
Voltage Rate of Change (Rated VR)
Maximum Forward
Voltage (Note 1)
SYMBOL
MBRF20100CT2
100
70
100
V
RRM
V
RMS
V
DC
I
(AV)
20
150
10000
0.75
0.85
0.85
0.95
0.1
100
2.0
350
-55 to +150
-55 to +175
2000
I
FSM
dv/dt
V
F
A
V/us
I
F
=10A @
T
J
=125 C
I
F
=10A @
T
J
=25 C
I
F
=20A @
T
J
=125 C
I
F
=20A @
T
J
=25 C
Maximum DC Reverse Current
@T
J
=25 C
at Rated DC Blocking Voltage
@T
J
=125 C
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance
per element (Note 3)
Operating Temperature Range
Storage Temperature Range
V
I
R
R
0JC
mA
C/W
pF
C
J
T
J
T
STG
V
dis
C
C
V
Dielectric Strengh from terminals to case,
AC with t=1 minute, RH<30%
NOTES : 1. 300us Pulse Width, 2% Duty Cycle.
2. Device mounted on 135 mm x 135 mm x 8mm Aluminum Plate Heatsink
3. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
REV. 0, Nov-2008, KTHC74
RATING AND CHARACTERISTIC CURVES
MBRF20100CT2
AVERAGE FORWARD CURRENT
AMPERES
20
PEAK FORWARD SURGE CURRENT,
AMPERES
FIG.1 - FORWARD CURRENT DERATING CURVE
FIG.2 - MAXIMUM NON-REPETITIVE SURGE CURRENT
150
125
100
75
50
25
8.3ms Single Half-Sine-Wave
15
10
5
RESISTIVE OR INDUCTIVE LOAD
0
25
0
1
2
5
10
20
50
100
50
75
100
125
150
175
CASE TEMPERATURE ,
℃
NUMBER OF CYCLES AT 60Hz
FIG.3 - TYPICAL REVERSE CHARACTERISTICS
100
FIG.4 - TYPICAL FORWARD CHARACTERISTICS
100
INSTANTANEOUS FORWARD CURRENT ,(A)
INSTANTANEOUS
REVERSE CURRENT ,(mA)
10
10
1.0
T
J
= 100
℃
0.1
T
J
= 75
℃
1.0
0.01
T
J
= 25
℃
T
J
= 25
℃
PULSE WIDTH 300us
2% Duty cycle
0.001
0
20
40
60
80
100
120
140
0.1
0.1
0.2
0.3
0.4
0.5
RATED PEAK REVERSE VOLTAGE (%)
0.6
0.7
0.8
0.9
1.0
INSTANTANEOUS FORWARD VOLTAGE , VOLTS
FIG.5 - TYPICAL JUNCTION CAPACITANCE
1000
CAPACITANCE , (pF)
100
T
J
= 25
℃
, f= 1MHz
10
0.1
1
4
10
100
REVERSE VOLTAGE , VOLTS
Note: LSC and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections
or other changes, to this document, and the products and services described herein at anytime, without notice.
DSP and ARM Processors
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