SD101A thru SD101C
Small-Signal Diode
Schottky Diodes
Features
For general purpose applications
The LL101 series is a metal-on-silicon Schottky barrier device
which is protected by a PN junction guard ring.
The low forward voltage drop and fast switching make it ideal
for protection of MOS devices, steering, biasing and coupling
diodes for fast switching and low logic level applications.
These diodes are also available in the MiniMELF case with type
designations LL101A thru LL101C.
Mechanical Data
Case: DO-35 Glass Case
Weight: approx. 0.13g
Maximum Ratings and Thermal Characteristics
(Ratings at 25
o
C ambient temperature unless otherwise specified.)
Parameter
S D 101A
S D 101B
S D 101C
Symbol
Value
60
50
40
400
(1)
Unit
Peak inverse voltage
Power dissipation (Infinite heatsink)
V
RRM
P
tot
I
FSM
R
θ
JA
T
j
T
S
Volts
mW
Amps
o
Maximum single cycle surge 10
u
s square wave
Thermal resistance junction to ambient air
Junction temperature
Storage temperature range
2.0
0.3
125
(1)
C/mW
o
(1)
C
C
-55 to +150
(1)
o
Notes:
1. Valid provided that leads at a distance of 4mm from case are kept at ambient temperature.
688
Electrical Characteristics
(T
J
=25
o
C unless otherwise noted.)
Parameter
S D 101A
S D 101B
S D 101C
S D 101A
S D 101B
S D 101C
S D 101A
S D 101B
S D 101C
S D 101A
S D 101B
S D 101C
S D 101A
S D 101B
S D 101C
Symbol
Test Condition
Min.
60
50
40
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
200
200
200
0.41
0.4
0.39
1.0
0.95
0.9
2.0
2.1
2.2
1
Unit
Reverse breakdown voltage
V
(BR)R
I
R
=10
uA
V
R
=50V
V
R
=40V
V
R
=30V
I
F
=1mA
Volts
Leakage current
I
R
nA
Volt
Forward voltage drop
V
F
I
F
=15mA
Volt
Junction capacitance
Reverse recovery time
C
tot
t
rr
V
R
=0V, f=1MHz
I
F
=I
R
=5mA,
recover to 0.1I
R
pF
ns
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