SMAJ130C datasheet, PDF - EEWORLD Datasheet

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SMAJ130C: DescriptionTrans Voltage Suppressor Diode, 130V V(RWM), Bidirectional; CategoryDiscrete semiconductor diode; File Size223KB，4 Pages; ManufacturerGood-Ark; Environmental Compliance; Suzhou Gotech is a complete and comprehensive manufacturer of design, manufacturing, packaging and sales in the domestic semiconductor discrete device diode industry. From the independent development of front-end chips to various packaging technologies of back-end finished products, it has formed a complete industrial chain. The main products include leadless integrated circuit products and discrete device products with the latest packaging technology, automotive rectifier diodes, power modules, rectifier diode chips, silicon rectifier diodes, switching diodes, Zener diodes, micro bridge piles, military fuses, photovoltaic bypass modules, etc., with a total of more than 50 series and more than 1,500 varieties. The products are widely used in many fields such as aerospace, automobiles, green lighting, IT, household appliances and power supply devices for large equipment. Design and develop silver paste for solar cells and various electronic pastes, and develop and mass produce various new sensors in the field of the Internet of Things.

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SMAJ130C Overview

Trans Voltage Suppressor Diode, 130V V(RWM), Bidirectional

SMAJ130C Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Good-Ark
Reach Compliance Code	compliant
Breakdown voltage nominal value	160 V
Maximum clamping voltage	231 V
Diode type	TRANS VOLTAGE SUPPRESSOR DIODE
polarity	BIDIRECTIONAL
Maximum repetitive peak reverse voltage	130 V
surface mount	YES

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SMAJ5.0 thru 440CA

Surface Mount Transient Voltage Suppressors

Peak Pulse Power 400W Stand Off Voltage 5.0 to 440V

Features

Plastic package has Underwriters Laboratory Flammability

Classification 94V-0

Optimized for LAN protection applications

Ideal for ESD protection of data lines in accordance with

IEC 1000-4-2 (IEC801-2)

Ideal for EFT protection of data lines in accordance with

IEC 1000-4-4 (IEC801-4)

Low profile package with built-in strain relief for surface

mounted applications

Glass passivated junction

Low incremental surge resistance, excellent clamping capability

400W peak pulse power capability with a 10/1000us wave-

form, repetition rate (duty cycle): 0.01% (300W above 78V)

Very fast response time

High temperature soldering guaranteed:

250

C/10 seconds at terminals

Mechanical Data

Case: JEDEC DO-214AC(SMA) molded plastic over passivated

chip

Terminals: Solder plated, solderable per MIL-STD-750,

Method 2026

Polarity: For uni-directional types the band denotes the cathode,

which is positive with respect to the anode under normal TVS

operation

Mounting Position: Any

Weight: 0.002oz., 0.064g

Devices for Bidirectional Applications

For bi-directional devices, use suffix CA (e.g. SMAJ10CA). Electrical characteristics apply in both directions.

Maximum Ratings and Thermal Characteristics

(Ratings at 25

C ambient temperature unless otherwise specified.)

Parameter

Peak pulse power dissipation with

a 10/1000

s waveform

(1,2)

(see Fig. 1)

Peak pulse current with a 10/1000

s waveform

(1)

Peak forward surge current, 8.3ms single half sine-wave

uni-directional only

(2)

Typical thermal resistance, junction to ambient

(3)

Typical thermal resistance, junction to lead

Operating junction and storage temperature range

Notes:

Symbol

PPM

FSM

, T

STG

Value

400

See Next Table

120

-55 to +150

Unit

C/W

1. Non-repetitive current pulse, per Fig. 3 and derated above T

=25

C per Fig. 2. Rating is 300W above 78V

2. Mounted on 0.2 x 0.2" (5.0 x 5.0 mm) copper pads to each terminal

3. Mounted on minimum recommended pad layout

572

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