PE42020
Product Specification
UltraCMOS® True DC RF Switch, 0 Hz–8000 MHz
Features
• High power handling
▪
30 dBm @ DC
▪
36 dBm @ 8 GHz
• Maximum voltage (DC or AC peak): ±10V on the
RF ports
• Total harmonic distortion (THD): –84 dBc
• Configurable 50Ω absorptive or open reflective
switch via a single pin (LZ)
• Packaging – 20-lead 4 × 4 mm QFN
Figure 1 •
PE42020 Functional Diagram
RFC
RF1
RF2
50Ω
50Ω
Applications
• Test and measurement
▪
Signal sources
▪
Communication testers
▪
Spectrum analyzers
▪
Network analyzers
• Automated test equipment
▪
Complex combination of DC + RF/analog and
digital signals
DC Tracking
CMOS Control Driver and ESD
LZ
LS CTRL V
DD
V
SS
Product Description
The PE42020 is a HaRP™ technology-enhanced SPDT True DC RF switch that operates from zero Hertz up to
8 GHz with integrated RF, analog and digital functions. The PE42020 can accommodate up to ±10V input DC
voltage on the RF ports. It can be configured as a 50Ω absorptive or an open reflective True DC switch via the
single LZ pin. The PE42020 True DC RF switch delivers excellent RF performance and high power handling
down to zero Hertz, making this device ideal for handling the complex combination of DC, RF/analog and digital
signals in test and measurement (T&M) and automated test equipment (ATE) applications.
The PE42020 is manufactured on Peregrine’s UltraCMOS
®
process, a patented variation of silicon-on-insulator
(SOI) technology on a sapphire substrate.
Peregrine’s HaRP™ technology enhancements deliver high linearity and excellent harmonics performance. It is
an innovative feature of the UltraCMOS process, offering the performance of GaAs with the economy and
integration of conventional CMOS.
©2014 – 2017, Peregrine Semiconductor Corporation. All rights reserved. • Headquarters: 9380 Carroll Park Drive, San Diego, CA, 92121
Product Specification
www.psemi.com
DOC-23814-4 – (7/2017)
PE42020
UltraCMOS® True DC RF Switch
Absolute Maximum Ratings
Exceeding absolute maximum ratings listed in
Table 1
may cause permanent damage. Operation should be
restricted to the limits in
Table 2.
Operation between operating range maximum and absolute maximum for
extended periods may reduce reliability.
ESD Precautions
When handling this UltraCMOS device, observe the same precautions as with any other ESD-sensitive devices.
Although this device contains circuitry to protect it from damage due to ESD, precautions should be taken to
avoid exceeding the rating specified in
Table 1.
Latch-up Immunity
Unlike conventional CMOS devices, UltraCMOS devices are immune to latch-up.
Table 1 •
Absolute Maximum Ratings for PE42020
Parameter/Condition
Positive supply voltage, V
DD
Negative supply voltage, V
SS
Digital input voltage (CTRL, LS, LZ)
RF input power (RFC–RFX), 50Ω
0–40 MHz
≥40–8000
MHz
Storage temperature range
ESD voltage HBM, all pins
(1)
ESD voltage MM, all pins
(2)
ESD voltage CDM, all pins
(3)
Notes:
1) Human body model (MIL-STD 883 Method 3015).
2) Machine model (JEDEC JESD22-A115).
3) Charged device model (JEDEC JESD22-C101).
Min
10
–17
–0.3
Max
17
–10
3.6
Unit
V
V
V
Fig. 2–Fig. 5
38
–65
+150
1000
150
1000
dBm
dBm
°C
V
V
V
Page 2
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DOC-23814-4 – (7/2017)
PE42020
UltraCMOS® True DC RF Switch
Recommended Operating Conditions
Table 2
list the recommending operating condition for PE42020. Devices should not be operated outside the
recommended operating conditions listed below.
Table 2 •
Recommended Operating Conditions for PE42020
Parameter
Positive supply voltage, V
DD
(1)
Negative supply voltage, V
SS
(1)
Positive supply current, I
DD
Negative supply current, I
SS
Digital input high (CTRL, LS, LZ)
Digital input low (CTRL, LS, LZ)
RF input power, CW (RFC–RFX)
(2)
RF input power, pulsed (RFC–RFX)
(3)
RF input power into terminated ports, CW (RFX)
(2)
Max DC bias voltage at RF ports
V
DD
= +11V, V
SS
= –11V,
≥
0 °C
V
DD
= +15V, V
SS
= –15V,
≥
0 °C
Max voltage
0–2 MHz (V
DD
= +11V, V
SS
= –11V,
≥
0 °C)
0–2 MHz (V
DD
= +15V, V
SS
= –15V,
≥
0 °C)
2–8000 MHz
DC current through RF active ports
Operating temperature range
Notes:
1) To maintain proper operation of the PE42020, a mismatch between V
DD
and V
SS
should not exceed a maximum of 8%. A large mismatch will
result in distortion appearing at the RF output at low frequencies. For example, V
DD
= +13.85V, V
SS
= –15V represents an 8% mismatch.
|13.85-15| / (13.85+15) / 2*100 = 8%.
2) 100% duty cycle, all bands 50Ω.
3) Pulsed, 5% duty cycle of 4620 µs period, 50Ω.
Min
11
–15
Typ
Max
15
–11
3.9
Unit
V
V
mA
mA
–3.8
1.17
–0.3
3.6
0.6
Fig. 2–Fig. 5
Fig. 2–Fig. 5
Fig. 6
V
V
dBm
dBm
dBm
–7
–10
+7
+10
V
V
–7
–10
Fig. 2–Fig. 5
+7
+10
Fig. 2–Fig. 5
80
V
V
V
mA
°C
–40
+25
+85
DOC-23814-4 – (7/2017)
www.psemi.com
Page 3
PE42020
UltraCMOS® True DC RF Switch
Electrical Specifications
Table 3
provides the PE42020 key electrical specifications @ 25 °C, V
DD
= +15V, V
SS
= –15V, LZ = 0
(absorptive), 0 VDC at RF ports (Z
S
= Z
L
= 50Ω), unless otherwise specified.
Table 3 •
PE42020 Electrical Specifications
(1)
Parameter
Operating frequency
0 Hz
0–3 GHz
3–6 GHz
6–8 GHz
0–3 GHz
3–6 GHz
6–8 GHz
0–3 GHz
3–6 GHz
6–8 GHz
0–3 GHz
3–6 GHz
6–8 GHz
0–3 GHz
3–6 GHz
6–8 GHz
1 kHz (2.5 V
PP
into 300Ω load)
RFC–RFX
40 MHz–8 GHz
836 MHz, 1900 MHz
2.7 GHz
4.8 GHz
836 MHz, 1900 MHz
2.7 GHz
4.8 GHz
50% CTRL to 0.05 dB finallue
50% CTRL to 90% or 10% RF
52
38
30
46
35
31
Path
Condition
Min
0 Hz
Typ
Max
8 GHz
Unit
As
shown
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dBc
dBm
dBm
dBm
dBm
dBm
dBm
dBm
Insertion loss
RFC–RFX
0.60
0.85
1.00
1.10
56
42
34
48
37
34
20
18
15
23
17
16
–84
38
115
105
90
62
61
55
35
10
0.70
1.00
1.30
1.35
RFX–RFX
Isolation
RFC–RFX
Return loss
(active and RFC ports)
RFC–RFX
Return loss
(terminated port)
Total harmonic distortion
Input 0.1dB compression
point
(2)
RFX
Input IP2
RFC–RFX
Input IP3
RFC–RFX
Settling time
Switching time
Notes:
1) Device is linear down to 0 Hz.
45
14
µs
µs
2) The input 0.1dB compression point is a linearity figure of merit. Refer to
Table 2
for the RF input power (50Ω).
Page 4
www.psemi.com
DOC-23814-4 – (7/2017)
PE42020
UltraCMOS® True DC RF Switch
Table 4
provides the PE42020 key electrical specifications @ 25 °C, V
DD
= +15V, V
SS
= –15V, LZ = 1 (open
reflective), 0 VDC at RF ports (Z
S
= Z
L
= 50Ω), unless otherwise specified.
Table 4 •
PE42020 Electrical Specifications
(1)
Parameter
Operating frequency
0 Hz
0–3 GHz
3–6 GHz
6–8 GHz
0–3 GHz
3–6 GHz
6–8 GHz
0–3 GHz
3–6 GHz
6–8 GHz
0–3 GHz
3–6 GHz
6–8 GHz
1 kHz (2.5 V
PP
into 300Ω load)
RFC–RFX
40 MHz–8 GHz
836 MHz, 1900 MHz
2.7 MHz
4.8 MHz
836 MHz, 1900 MHz
2.7 MHz
4.8 MHz
50% CTRL to 0.05 dB final value
50% CTRL to 90% or 10% RF
35
29
25
34
27
21
Path
Condition
Min
0 Hz
Typ
Max
8 GHz
Unit
As
shown
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dBc
dBm
dBm
dBm
dBm
dBm
dBm
dBm
Insertion loss
RFC–RFX
0.60
0.85
1.00
1.10
37
31
27
36
29
24
20
19
15
–84
38
115
105
90
62
61
55
35
10
0.75
1.00
1.25
1.35
RFX–RFX
Isolation
RFC–RFX
Return loss
(active and RFC ports)
Total harmonic distortion
Input 0.1dB compression
point
(2)
RFC–RFX
Input IP2
RFC–RFX
Input IP3
RFC–RFX
Settling time
Switching time
Notes:
1) Device is linear down to 0 Hz.
45
14
µs
µs
2) The input 0.1dB compression point is a linearity figure of merit. Refer to
Table 2
for the RF input power (50Ω).
DOC-23814-4 – (7/2017)
www.psemi.com
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