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PJSMF05LC_R1_00001

Description
Trans Voltage Suppressor Diode
CategoryDiscrete semiconductor    diode   
File Size218KB,6 Pages
ManufacturerPANJIT
Websitehttp://www.panjit.com.tw/
Environmental Compliance

PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values ​​include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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PJSMF05LC_R1_00001 Overview

Trans Voltage Suppressor Diode

PJSMF05LC_R1_00001 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerPANJIT
Reach Compliance Codecompliant
ECCN codeEAR99
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum time at peak reflow temperatureNOT SPECIFIED

PJSMF05LC_R1_00001 Preview

Download Datasheet
PJSMF05LC / PJSMF15LC
5-TVS/ZENER ARRAY FOR ESD AND LATCH-UP PROTECTION
This 5-TVS/Zener Array has been designed to Protect Sensitive Equipment against
ESD and to prevent Latch-Up events in CMOS circuitry, operating at 5V , as well
available for
5V and
15V Systems. This TVS array offers an integrated solution to protect
up to 5 data lines where the board space is a premium.
SPECIFICATION FEATURES
100W Power Dissipation (8/20µs Waveform)
Low Leakage Current
Very Low Clamping Voltage
IEC61000-4-2 ESD 20kV air, 15kV Contact Compliance
Operating voltage options for 5V, 15V
Industry Standard SOT363 (SC70-6L) Package
6
5
1
4
APPLICATIONS
Personal Digital Assistant (PDA)
SIM Card Port Protection (Mobile Phone)
Portable Instrumentation
Mobile Phones and Accessories
Memory Card Port Protection
1
2
3
SOT363
MAXIMUM RATINGS (Per Device)
Rating
Peak Pulse Power (8/20µs Waveform)
ESD Voltage (HBM)
Operating Temperature Range
Storage Temperature Range
Symbol
P
pp
V
ESD
TJ
T
stg
Value
100
25
-55 to +150
-55 to + 150
Units
W
kV
°C
°C
ELECTRICAL CHARACTERISTICS (Per Device)
Tj = 25°C
PJSMF05LC
Parameter
Reverse Stand-Off Voltage
Reverse Breakdown Voltage
Reverse Leakage Current
Clamping Voltage (8/20µs)
Clamping Voltage (8/20µs)
Off State Junction Capacitance
Off State Junction Capacitance
Symbol
V
WRM
V
BR
I
R
V
c
V
c
Cj
Cj
I
BR
= 1mA
V
R
= 5V
I pp = 5A
I pp = 9A
0 Vdc Bias f = 1MHz
Between I/O pins and pin 2
5 Vdc Bias f = 1MHz
Between I/O pins and pin 2
Conditions
Min
Typical
Max
5
Units
V
V
6.2
0.5
10
11
100
45
µA
V
V
pF
pF
November 30,2011-REV.01
Page
1
www.panjit.com
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