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PE4152

Description
Quad MOSFET array with integrated LO enable and bypass mode
File Size435KB,20 Pages
Manufacturerpsemi

Peregrine RF products are manufactured by pSemi, a Murata company focused on semiconductor integration. For three decades, the Peregrine brand has been synonymous with semiconductor technology innovation. In 1988, our founders established our UltraCMOS® technology platform - a patented, advanced Silicon-On-Insulator (SOI) structure that enables cutting-edge performance.

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Quad MOSFET array with integrated LO enable and bypass mode

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PE4152
Document Category: Product Specification
UltraCMOS® Quad MOSFET Mixer
Features
• Quad MOSFET array with integrated LO enable
and bypass mode
• Ultra high linearity in both LO modes
LO enable: 25 dBm IIP3, 52 dBm IIP2
LO bypass: 24 dBm IIP3, 46 dBm IIP2
• High isolation in both LO modes
LO enable: 30/30 dB LO–RF/IF
LO bypass: 60/58 dB LO–RF/IF
• Low conversion loss in both LO modes
• Packaging – 20-lead 4 × 4 × 0.85 mm QFN
Figure 1 •
PE4152 Functional Diagram
V
DD
RF
LO
Applications
• Land-mobile-radio (LMR)
Portable radio
Mobile radio
• Cellular infrastructure
• Set-top box (STB)/CATV systems
GND
EN
MixBias
(optional)
IF
Product Description
The PE4152 is a high linearity quad metal-oxide-semiconductor field-effect transistor (MOSFET) mixer with an
integrated local oscillator (LO) amplifier. The LO amplifier allows for LO input drive levels of less than 0 dBm to
produce third-order intercept point (IIP3) values similar to a quad MOSFET array driven with a 15 dBm LO drive.
The PE4152 operates with differential signals at the radio frequency (RF) and intermediate frequency (IF) ports
and the integrated LO buffer amplifier drives the mixer core. It can be used as an upconverter or a downcon-
verter.
The PE4152 also offers an integrated LO amplifier bypass option providing additional flexibility for low power or
increased linearity operation. The bypassed LO amplifier allows superior LO to RF and LO to IF isolation levels
relative to the enabled mode.
The PE4152 is manufactured on Peregrine’s UltraCMOS
®
process, a patented variation of silicon-on-insulator
(SOI) technology on a sapphire substrate, offering the performance of GaAs with the economy and integration of
conventional CMOS.
©2015–2016, Peregrine Semiconductor Corporation. All rights reserved. • Headquarters: 9380 Carroll Park Drive, San Diego, CA, 92121
Product Specification
www.psemi.com
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