2SB927S datasheet, PDF - EEWORLD Datasheet

Datasheet> All Categories > Discrete semiconductor> The transistor> 2SB927S

2SB927S: DescriptionTransistor; CategoryDiscrete semiconductor The transistor; File Size115KB，1 Pages; ManufacturerJCET; Websitehttp://www.cj-elec.com/; Jiangsu Changdian Technology Co., Ltd. focuses on semiconductor packaging and testing business, providing customers at home and abroad with a full range of solutions such as chip testing, packaging design, packaging testing, etc. The company was successfully listed on the Shanghai Main Board in 2003, becoming the first semiconductor packaging and testing listed company in China. It now has a national enterprise technology center and a postdoctoral research workstation. It is a national key high-tech enterprise, a supporting unit of the National Engineering Laboratory for High-density Integrated Circuits, and the chairman unit of the Integrated Circuit Packaging Technology Innovation Strategic Alliance.

Discrete devices: diodes (switching diodes, Schottky diodes (Schottky rectifiers), voltage regulator diodes, Pin diodes, TVS diodes, rectifier diodes, fast recovery diodes); transistors (Darlington tubes, digital transistors, MOSFETs); thyristors: silicon-controlled rectifiers, triacs; composite tubes: transistors + field-effect tubes, dual transistors, dual digital transistors, digital transistors + transistors, transistors + diodes, field-effect tubes + diodes, dual field-effect tubes. Voltage regulator circuit; energy-saving lamp charger switch tube

Lead frame: TO series (TO); SOD series (SOD); SOT series (TSOT, SOT); FBP series (WBFBP); QFN series (QFNWB, DFNWB, DFNFC, QFNFC); QFP series (LQFP: PQFP: PLCC: TQFP); SIP series (SIP, HSIP, FSIP); SOP series (SOP, HSOP, SSOP, MSOP, HTSOP, TSSOP); DIP series (DIP, FDIP, SDIP); PDFN series; PQFN series; MIS series (MISFC, MISWB)

Nine core technologies: Through Silicon Via (TSV) packaging technology; SiP RF packaging technology; wafer-level 3D rewiring packaging process technology; copper bump interconnection technology; high-density FC-BGA packaging and testing technology (Flip Chip BGA); multi-turn array four-sided pinless packaging and testing technology; package body 3D stacking technology; 50μm or less ultra-thin chip 3D stacking packaging technology; MEMS multi-chip packaging technology; MIS packaging technology (pre-encapsulated interconnection system); BGA packaging technology, etc.

Download Datasheet Parametric View All

2SB927S Overview

Transistor

2SB927S Parametric

Parameter Name	Attribute value
package instruction	,
Reach Compliance Code	unknow
Base Number Matches	1

2SB927S Preview

Download Datasheet

View All

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

TO-92MOD Plastic-Encapsulate Transistors

2SB927

TRANSISTOR (PNP)

TO – 92M

TO – 92MOD

1. COLLECTOR

1. EMITTER

2. BASE

2. COLLECTOR

3. EMITTER

3. BASE

FEATURES

Low Saturation Voltage

Large Current Capacity and Wide ASO

APPLICATIONS

Power Supplies

Relay Drivers

Lamp Drivers

MAXIMUM RATINGS (T

=25℃ unless otherwise noted)

Symbol

CBO

CEO

EBO

θJA

stg

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Collector Power Dissipation

Thermal Resistance From Junction To Ambient

Junction Temperature

Storage Temperature

Value

-30

-25

-6

-2.5

125

150

-55~+150

Unit

℃/W

℃

ELECTRICAL CHARACTERISTICS (T

=25℃ unless otherwise specified)

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

DC current gain

Collector-emitter saturation voltage

Base-emitter saturation voltage

Collector output capacitance

Transition frequency

Symbol

(BR)CBO

(BR)CEO

(BR)EBO

CBO

EBO

FE(1)

FE(2)

CE(sat)

BE (sat)

Test

conditions

Min

-30

-25

-6

-0.1

100

-0.6

-1.2

150

MHz

560

Typ

Max

Unit

μA

=-100µA,I

=-1mA,I

=-100µA,I

=-20V,I

=-4V,I

=-2V, I

=-0.1A

=-2V, I

=-1.5A

=-1.5A,I

=-75mA

=-1.5A,I

=-75mA

=-10V,I

=0, f=1MHz

=-10V,I

=-50mA

CLASSIFICATION OF h

FE(1)

RANK

RANGE

100-200

140-280

200-400

280-560

A,Dec,2010

Recommended Resources

High-precision low-noise filter circuit design

AC equivalent circuit of triode

Adjustable high voltage source circuit

Electronic rapid starter for fluorescent lamps

Input protection circuit diagram c

Color TV remote control 37

SBW and JTAG interface issues: When debugging with the SBW interface, the program runs very slowly. I would like to ask the experts what are the interface transfer rates of SBW and JTAG? Is JTAG much faster than SBW when debugging?...; 绵里针 Microcontroller MCU

STM32F4 SPI+DMA control display: 1. I use SPI+DMA to control the display screen, send data to the display screen, single-step debugging is normal, and less pixels are displayed at full speed....; datacraft_z stm32/stm8

Meteor Light Program: How can a series of small lights flow like shooting stars? The following program can only control the gradual fading of the lights as a whole. Can anyone help me modify it, or have new ideas? Thanks! ...; TSB11 MCU

Stepper Motor Classic Data: Good information about stepper motors...; freeky MCU

Infineon BFP540FESD internal diagram: Infineon BFP540FESD-30Ghz fT NPN BJTHD pictures...; dcexpert MicroPython Open Source section

The left hand warms the right hand: must-read electronic knowledge: Today I met a classmate, whose QQ personal signature is: left hand warms right hand, so I want to add some fun to the forum! Please write something with this topic! I wrote: left hand warms right hand...; makechinawei Talking

Popular Components