GARS352 datasheet, PDF - EEWORLD Datasheet

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GARS352: DescriptionRectifier Diode, 1 Phase, 1 Element, 35A, 200V V(RRM), Silicon,; CategoryDiscrete semiconductor diode; File Size119KB，2 Pages; ManufacturerGood-Ark; Environmental Compliance; Suzhou Gotech is a complete and comprehensive manufacturer of design, manufacturing, packaging and sales in the domestic semiconductor discrete device diode industry. From the independent development of front-end chips to various packaging technologies of back-end finished products, it has formed a complete industrial chain. The main products include leadless integrated circuit products and discrete device products with the latest packaging technology, automotive rectifier diodes, power modules, rectifier diode chips, silicon rectifier diodes, switching diodes, Zener diodes, micro bridge piles, military fuses, photovoltaic bypass modules, etc., with a total of more than 50 series and more than 1,500 varieties. The products are widely used in many fields such as aerospace, automobiles, green lighting, IT, household appliances and power supply devices for large equipment. Design and develop silver paste for solar cells and various electronic pastes, and develop and mass produce various new sensors in the field of the Internet of Things.

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GARS352 Overview

Rectifier Diode, 1 Phase, 1 Element, 35A, 200V V(RRM), Silicon,

GARS352 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Good-Ark
Reach Compliance Code	compliant
ECCN code	EAR99
application	GENERAL PURPOSE
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	1.1 V
JESD-30 code	O-PEDB-N2
Maximum non-repetitive peak forward current	400 A
Number of components	1
Phase	1
Number of terminals	2
Maximum operating temperature	175 °C
Minimum operating temperature	-65 °C
Maximum output current	35 A
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	DISK BUTTON
Maximum repetitive peak reverse voltage	200 V
Maximum reverse current	5 µA
surface mount	YES
Terminal form	NO LEAD
Terminal location	END

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GAR351 thru GAR356 / GARS351 thru GARS356

Button Diodes

Current 35 Amps

Voltage Range 100 to 600Volts

Technical Specification:

Features:

Low leakage

Low forward voltage drop

High current capability

High forward surge current capability

Mechanical Data:

Technology: Vacuum soldered.

Case: Transfer molded plastic.

Polarity: Color ring denotes cathode.

Lead: Plated lead, solderable per MIL-STD-202E method 208C

Mounting position: Any

Weight: 0.064 ounces, 1.8 grams

Dimensions in inches and (millimeters)

Maximum Ratings and Electrical Characteristics

Rating at 25

C ambient temperature unless otherwise specified.

Single phase, half wave, 60Hz, resistive or inductive load.

For capacitive load derate current by 20%.

P ar m et r

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M axi um r pettve peak r ver e volage

e ii

M axi um R M S volage

M axi um D C bl cki g volage

o n

M axi um A ver ge r ctfed f r ar curentatT

=105

e ii o w d

P eak f r ar sur e curent8. m S si gl hal si e- ave

ow d

n e

f n w

superm posed on r t d l ad ( E D E C M et od)

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R atng f rf si g (<8. m S )

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M axi um i st nt neous f r ar volage dr p at100A

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Notes:

=25

=150

S ym bol

RRM

RM S

(

S M

G A R 351

G A R S 351

100

G A R 352

G A R S 352

200

140

200

G A R 353

G A R S 353

300

210

300

400

664

1. 0

450

- 5 t +175

6 o

G A R 354

G A R S 354

400

280

400

G A R 356

G A R S 356

600

420

600

U nis

Vols

A m ps

Vols

S TG

1. Enough heatsink must be considered in application.

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