MMBTA42T/R13 datasheet, PDF - EEWORLD Datasheet

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MMBTA42T/R13: DescriptionSmall Signal Bipolar Transistor, 0.5A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-3; CategoryDiscrete semiconductor The transistor; File Size194KB，4 Pages; ManufacturerPANJIT; Websitehttp://www.panjit.com.tw/; Environmental Compliance; PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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MMBTA42T/R13 Overview

Small Signal Bipolar Transistor, 0.5A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-3

MMBTA42T/R13 Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	PANJIT
package instruction	SMALL OUTLINE, R-PDSO-G3
Contacts	3
Reach Compliance Code	compliant
ECCN code	EAR99
Maximum collector current (IC)	0.5 A
Collector-emitter maximum voltage	300 V
Configuration	SINGLE
Minimum DC current gain (hFE)	40
JESD-30 code	R-PDSO-G3
Number of components	1
Number of terminals	3
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
Transistor component materials	SILICON
Nominal transition frequency (fT)	50 MHz

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MMBTA42

NPN HIGH VOLTAGE TRANSISTOR

VOLTAGE

FEATURES

• NPN silicon, planar design

• Collector-emitter voltage V

= 300V

• Collector current I

= 500mA

• In compliance with EU RoHS 2002/95/EC directives

300 Volts

POWER

225 mWatts

MECHANICAL DATA

• Case: SOT-23, Plastic

• Terminals: Solderable per MIL-STD-750, Method 2026

• Approx. Weight: 0.008 gram

• Marking: A42

ABSOLUTE MAXIMUM RATINGS

PA RA M E TE R

C o lle c to r - E mi tte r Vo lta g e

C o lle c to r - B a s e Vo lta g e

E mi tte r - B a s e Vo lta g e

C o l l e c t o r C ur r e nt C o nt i nuo us

S ym b o l

CEO

CBO

EBO

Va l ue

300

6 .0

500

U ni t s

THERMAL CHARACTERISTICS

PA RA M E TE R

Ma x P o we r D i s s i p a ti o n (No te 1 )

The r m a l R e s i s t a nc e , J unc t i o n t o A m b i e nt

J u n c t i o n Te m p e r a t u r e

S t o r a g e Te m p e r a t u r e

S ym b o l

TOT

J A

S TG

Va l ue

225

556

-5 5 to 1 5 0

U ni t s

C /W

Top View

Collector

BASE

COLLECTOR

Note 1: Transistor mounted on FR-5 board 1.0 x 0.75 x 0.062 in.

Base

Emitter

EMITTER

STAD-MAR.24.2008

PAGE . 1

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