GSBCX56-16 datasheet, PDF - EEWORLD Datasheet

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GSBCX56-16: DescriptionSmall Signal Bipolar Transistor,; CategoryDiscrete semiconductor The transistor; File Size920KB，5 Pages; ManufacturerGood-Ark; Environmental Compliance; Suzhou Gotech is a complete and comprehensive manufacturer of design, manufacturing, packaging and sales in the domestic semiconductor discrete device diode industry. From the independent development of front-end chips to various packaging technologies of back-end finished products, it has formed a complete industrial chain. The main products include leadless integrated circuit products and discrete device products with the latest packaging technology, automotive rectifier diodes, power modules, rectifier diode chips, silicon rectifier diodes, switching diodes, Zener diodes, micro bridge piles, military fuses, photovoltaic bypass modules, etc., with a total of more than 50 series and more than 1,500 varieties. The products are widely used in many fields such as aerospace, automobiles, green lighting, IT, household appliances and power supply devices for large equipment. Design and develop silver paste for solar cells and various electronic pastes, and develop and mass produce various new sensors in the field of the Internet of Things.

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GSBCX56-16 Overview

Small Signal Bipolar Transistor,

GSBCX56-16 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Good-Ark
package instruction	,
Reach Compliance Code	compliant
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Maximum time at peak reflow temperature	NOT SPECIFIED

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GSBCX54-55-56

NPN

Transistor

Features

■

NPN Complements to GSBCX51,GSBCX52,GSBCX53

Low

voltage

High

current

SOT-89-3L

1. BASE

Applications

■

2. COLLECTOR

3. EMITTER

Driver Stages of Audio Amplifiers

Absolute Maximum Ratings

=25°C unless otherwise noted）

Parameter

GSBCX54

Collector-Base

GSBCX55

Voltage

GSBCX56

Collector-

Emitter

Voltage

GSBCX54

GSBCX55

GSBCX56

EBO

θJA

STG

CEO

Symbol

CBO

Value

100

0.1

0.2

500

250

150

-55 to +150

℃/W

℃

Unit

Emitter-Base Voltage

Collector Current

Base Current

Peak Base Current (tp<1ms)

Collector Power Dissipation

Thermal Resistance From

Junction To Ambient

Junction Temperature

Storage Temperature

1/5

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