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Datasheet> All Categories > Discrete semiconductor> The transistor> 2SD794AR
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2SD794AR

Description
Transistor
CategoryDiscrete semiconductor    The transistor   
File Size246KB，1 Pages
ManufacturerJCET
Websitehttp://www.cj-elec.com/

Jiangsu Changdian Technology Co., Ltd. focuses on semiconductor packaging and testing business, providing customers at home and abroad with a full range of solutions such as chip testing, packaging design, packaging testing, etc. The company was successfully listed on the Shanghai Main Board in 2003, becoming the first semiconductor packaging and testing listed company in China. It now has a national enterprise technology center and a postdoctoral research workstation. It is a national key high-tech enterprise, a supporting unit of the National Engineering Laboratory for High-density Integrated Circuits, and the chairman unit of the Integrated Circuit Packaging Technology Innovation Strategic Alliance.

Discrete devices: diodes (switching diodes, Schottky diodes (Schottky rectifiers), voltage regulator diodes, Pin diodes, TVS diodes, rectifier diodes, fast recovery diodes); transistors (Darlington tubes, digital transistors, MOSFETs); thyristors: silicon-controlled rectifiers, triacs; composite tubes: transistors + field-effect tubes, dual transistors, dual digital transistors, digital transistors + transistors, transistors + diodes, field-effect tubes + diodes, dual field-effect tubes. Voltage regulator circuit; energy-saving lamp charger switch tube

Lead frame: TO series (TO); SOD series (SOD); SOT series (TSOT, SOT); FBP series (WBFBP); QFN series (QFNWB, DFNWB, DFNFC, QFNFC); ​​QFP series (LQFP: PQFP: PLCC: TQFP); SIP series (SIP, HSIP, FSIP); SOP series (SOP, HSOP, SSOP, MSOP, HTSOP, TSSOP); DIP series (DIP, FDIP, SDIP); PDFN series; PQFN series; MIS series (MISFC, MISWB)

Nine core technologies: Through Silicon Via (TSV) packaging technology; SiP RF packaging technology; wafer-level 3D rewiring packaging process technology; copper bump interconnection technology; high-density FC-BGA packaging and testing technology (Flip Chip BGA); multi-turn array four-sided pinless packaging and testing technology; package body 3D stacking technology; 50μm or less ultra-thin chip 3D stacking packaging technology; MEMS multi-chip packaging technology; MIS packaging technology (pre-encapsulated interconnection system); BGA packaging technology, etc.

 

 

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2SD794AR Overview

Transistor

2SD794AR Parametric

Parameter NameAttribute value
package instruction,
Reach Compliance Codeunknow
Base Number Matches1

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-126C Plastic-Encapsulate Transistors
2SD794/794A
FEATURES
High
Voltage
and Large
Current Capacity
Complementary to 2SB744,2SB744A
MAXIMUM RATINGS
(T
a
=25
℃
unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage 2SD794
2SD794A
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
70
45
60
5
3
1
150
-55 to +150
Unit
V
V
V
A
W
℃
℃
TRANSISTOR (NPN)
TO- 126C
1. EMITTER
2. COLLECTOR
3. BASE
ELECTRICAL CHARACTERISTICS (T
a
=25
℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE(1)
DC current gain
h
FE(2)
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
V
CE(sat)
V
BE(sat)
unless
Test
otherwise
specified
Min
)
Typ
Max
Unit
V
V
V
conditions
I
C
=
100
µA,I
E
=0
I
C
=
1
mA,I
B
=0
2SD794
2SD794A
I
E
=
100
µA,I
C
=0
V
CB
=
45
V,I
E
=0
V
EB
=
3
V,I
C
=0
V
CE
=
5
V,I
C
=
20
mA
V
CE
=
5
V,I
C
=
0.5
A
I
C
=
1.5
A,I
B
=
0.15
A
I
C
=
1.5
A,I
B
=
0.15
A
V
CE
=
5
V,I
C
=
100
mA
V
CB
=
10
V,I
E
=0,f=
1
MHz
70
45
60
5
1
1
30
60
320
2
2
60
40
µA
µA
V
V
MHz
pF
f
T
C
ob
CLASSIFICATION OF
Rank
Range
Marking
h
FE(2)
R
60-120
Q
100-200
P
160-320
A,Jun,2011

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