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STPR1660CTW

Description
Rectifier Diode,
CategoryDiscrete semiconductor    diode   
File Size242KB,3 Pages
ManufacturerLITEON
Websitehttp://optoelectronics.liteon.com/en-global/Home/index
Lite-On began producing LED lamps in 1975; the company has steadily grown to become one of the world's largest manufacturers of optoelectronics products by providing customers with visible and infrared product solutions. High-volume production of commercial and application-specific products, as well as strong R&D and vertical integration capabilities have proven to be key and differentiating factors in Lite-On's success.
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STPR1660CTW Overview

Rectifier Diode,

STPR1660CTW Parametric

Parameter NameAttribute value
MakerLITEON
Reach Compliance Codecompliant

STPR1660CTW Preview

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STPR1660CTW
SUPER FAST
GLASS PASSIVATED RECTIFIERS
FEATURES
• Glass passivated chip
• Super fast switching time for high efficiency
• Low forward drop voltage and high current capability
• Low reverse leakage current
• High surge capacity
• Qualification is according to AEC-Q101 Rev_D
APPLICATION
• Switched mode Power supplies
• High frequency DC to DC converters
MECHANICAL DATA
• Case : TO-220AB molded plastic
• Case Material: “Green” molding compound, UL
flammability classification 94V-0, (No Br. Sb. CI.)
"Halogen-free".
• Wight : 1.927grams(Approximate)
• Lead free finish , RoHS compliant
• Marking code:STPR1660CTW
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
ABSOLUTE RATINGS
PARAMETER
Maximum repetitive peak reverse voltage
Maximum DC blocking voltage
Average rectified output current
@ T
C
= 105°C
SYMBOL
V
RRM
V
DC
I
(AV)
I
FSM
T
J
,T
STG
VALUE
600
600
16
100
-55 to +150
UNIT
V
V
A
A
°C
REVERSE VOLTAGE
- 600 Volts
FORWARD CURRENT - 16 Amperes
TO-220AB(WB)
TO-220AB
DIM
MIN
MAX
A
14.40
15.20
B
9.65
10.67
C
2.54
3.43
D
5.84
6.86
E
8.26
9.28
F
-
4.20
G
12.70
14.73
H
2.29
2.79
I
0.51
1.00
J
0.30
0.64
K
3.53Φ
4.09Φ
L
3.56
4.83
M
1.14
1.40
N
2.03
2.92
O
1.14
1.37
All Dimensions in millimeter
Peak forward surge current 8.3ms single half sine-wave
superimposed on rated load.
Operating and Storage temperature range
STATIC ELECTRICAL CHARACTERISTICS
PARAMETER
Forward voltage
(Note1)
TEST CONDITION
T
J
=25°C
I
F
=8A
T
J
=125°C
T
J
=25°C
I
F
=16A
T
J
=125°C
T
J
=25°C
V
R
=600V
T
J
=100°C
SYMBOL
V
F
TYP
--
1.02
--
1.19
--
2.34
55
MAX
1.50
1.40
1.70
1.60
10
500
UNIT
V
Leakage current
Typical junction capacitance (Note2)
I
R
C
j
uA
pF
THERMAL CHARACTERISTICS
PARAMETER
Typical thermal resistance (Note3,4)
SYMBOL
RthJ
c
TYP
2
UNIT
°C/W
DYNAMIC ELECTRICAL CHARACTERISTICS
PARAMETER
TEST CONDITION
SYMBOL
Reverse recovery time
I
F
= 0.5A, I
rr
=0.25A, I
R
=1.0A
T
RR
Note :
(1) 300us pulse width, 2% duty cycle.
(2) Measured at 1.0MHz and applied reverse voltage of 4.0 V DC
(3) The unit mounted on copper heatsink 100mm x 100mm x 2.04mm
(4) Thermal Resistance test performed in accordance with JESD-51
MAX
50
UNIT
nS
REV.-1 ,Oct.-2018, KTGC91
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