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MB24_09

Description
2 A, 100 V, SILICON, RECTIFIER DIODE, DO-214AA
Categorysemiconductor    Discrete semiconductor   
File Size88KB,2 Pages
ManufacturerPANJIT
Websitehttp://www.panjit.com.tw/

PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values ​​include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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2 A, 100 V, SILICON, RECTIFIER DIODE, DO-214AA

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MB24~MB220
SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER
VOLTAGE
FEATURES
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-O
• For surface mounted applications
• Low profile package
• Built-in strain relief
• Metal to silicon rectifier. majority carrier conduction
• Low power loss,high efficiency
• High surge capacity
• For use in low voltage high frequency inverters, free wheeling,
and polarity protection applications
• In compliance with EU RoHS 2002/95/EC directives
40 to 200 Volts
CURRENT
2.0 Amperes
PRELIMINARY
MECHANICAL DATA
Case: JEDEC DO-214AA molded plastic
Terminals:Solder plated, solderable per MIL-STD-750, Method 2026
Polarity: Color band denotes positive end (cathode)
Standard packaging: 12mm tape (EIA-481)
Weight: 0.0032 ounce, 0.092 gram
MAXIMUM RATINGS
Ratings at 25°C ambient temperature unless otherwise specified. Resistive or inductive load.
PA RA ME TE R
Maxi mum Recurrent P eak Reverse Voltage
Maxi mum RMS Voltage
Maxi mum D C B locki ng Voltage
Maxi mum A verage Forward C urrent ( S e e F i g u r e 1 )
P eak Forward S urge C urrent :8.3ms si ngle half si ne-wave
superi mposed on rated load(JE D E C method)
Maxi mum Forward Voltage at 2.0A ( Note 1)
Maxi mum D C Reverse C urrent T
J
=25
O
C
at Rated D C B locki ng Voltage T
J
=100
O
C
Typi cal Thermal Resi stance ( Note 2)
O p e r a t i n g J u n c t i o n a n d S t o r a g e Te m p e r a t u r e
R a ng e
S YMB OL
V
R R M
V
R M S
V
D C
I
F ( A V )
I
F S M
V
F
I
R
R
θ
J L
T
J
, T
S T G
MB 24
MB 24A
MB 25
MB 26
MB 28
MB 29
MB 210
MB 215
MB 220
UNITS
V
V
V
A
A
40
28
40
45
3 1 .5
45
50
35
50
60
42
60
80
56
80
2.0
50
90
63
90
100
70
100
150
105
150
200
140
200
0.70
0.74
0.05
20
12
0.80
0.90
V
mA
O
C/W
O
-55 to +150
-55 to +175
C
NOTES:
1. Pulse Test with PW =300µsec, 1% Duty Cycle.
2. Mounted on P.C. Board with 8mm
2
(.013mm thick) copper pad areas.
STAD-MAR.13.2009
2
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