MMBD770WS datasheet, PDF - EEWORLD Datasheet

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MMBD770WS: Description0.25 A, 70 V, SILICON, SIGNAL DIODE; CategoryDiscrete semiconductor diode; File Size167KB，3 Pages; ManufacturerPANJIT; Websitehttp://www.panjit.com.tw/; Environmental Compliance; PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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MMBD770WS Overview

0.25 A, 70 V, SILICON, SIGNAL DIODE

MMBD770WS Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	PANJIT
package instruction	R-PDSO-F2
Contacts	2
Reach Compliance Code	compli
ECCN code	EAR99
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
JESD-30 code	R-PDSO-F2
JESD-609 code	e3
Number of components	1
Number of terminals	2
Maximum operating temperature	125 °C
Minimum operating temperature	-55 °C
Maximum output current	0.25 A
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Maximum power dissipation	0.18 W
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	70 V
surface mount	YES
technology	SCHOTTKY
Terminal surface	Matte Tin (Sn)
Terminal form	FLAT
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED

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DATA SHEET

MMBD770WS

SURFACE MOUNT SCHOTTKY

DIODES

VOLTAGE

FEATURES

.045(1.15)

.054(1.35)

SOD-323

Unit: inch (mm)

Volts

POWER

200mA

.078(1.95)

.068(1.75)

.014(.35)

•

Extremely low minority carrier lifetime

•

Low capacitance ( 0.4pF @ 20V typical )

•

Low reverse leakage ( 30nA @ 35V typical )

•

Surface mount package ideally suited for automatic insertion

.009(.25)

.006(.15)

In compliance with EU RoHS 2002/95/EC directives

.107(2.7)

.090(2.3)

MECHANICAL DATA

Case: SOD-323, Plastic

Terminals: Solderable per MIL-STD-750, Method 2026

Approx. Weight: 0.0048 gram

.012(.30)MIN.

Marking : 770

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25

C ambient temperature unless otherwise specified.

Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

PARAMETER

Maximum Reverse Voltage

Peak Reverse Voltage

Continuous Forward Current

Power Dissipation

(1)

SYMBOL

RRM

TOT

(1)

VALUE

0.25

180

556

-55 to 125

-55 to 150

.002(.05)

.038(.95)

.027(.70)

UNIT

℃/W

℃

Thermal Resistance , Junction to Ambient

Junction Temperature

Storage Temperature

Notes： 1. FR-4 Board = 70 × 60 × 1mm.

QJ A

STG

ELECTRICAL CHARACTERISTICS (T

=25°C, unless otherwise noted)

PARAMETER

Reverse Breakdown Voltage

Reverse Current

Forward Voltage

Typical Capacitance

SYMBOL

(BR)

TEST CONDITION

=10uA

=35 V

=1mA

=10mA

=20V, f =1MHz

MIN.

TYP.

MAX.

0.2

0.5

1.0

UNIT

REV.0.1-FEB.23.2009

PAGE . 1

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