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MMDT2222ATB6T/R7

Description
DUAL SURFACE MOUNT NPN TRANSISTORS
CategoryDiscrete semiconductor    The transistor   
File Size177KB,4 Pages
ManufacturerPANJIT
Websitehttp://www.panjit.com.tw/
Environmental Compliance

PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values ​​include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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MMDT2222ATB6T/R7 Overview

DUAL SURFACE MOUNT NPN TRANSISTORS

MMDT2222ATB6T/R7 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerPANJIT
package instructionSMALL OUTLINE, R-PDSO-F6
Contacts6
Reach Compliance Codecompli
ECCN codeEAR99
Maximum collector current (IC)0.6 A
Collector-emitter maximum voltage40 V
ConfigurationSEPARATE, 2 ELEMENTS
Minimum DC current gain (hFE)40
JESD-30 codeR-PDSO-F6
Number of components2
Number of terminals6
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountYES
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)300 MHz
Maximum off time (toff)285 ns
Maximum opening time (tons)35 ns

MMDT2222ATB6T/R7 Preview

Download Datasheet
MMDT2222ATB6
DUAL SURFACE MOUNT NPN TRANSISTORS
This device contains two electrically-isolated 2N2222A NPN transistors.
The two transistors have well matched hFE and are encapsulated in an
ultra-small SOT-563 package. This device is ideal for portable
applications where board space is at a premium.
FEATURES
Electrically Isolated Dual NPN Switching Transistor
In compliance with EU RoHS 2002/95/EC directives
6
5
4
APPLICATIONS
General Purpose Amplifier Applications
Hand-Held Computers, PDAs
Device Marking Code:
TU
1
2
3
MAXIMUM RATINGS
Rating
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation (Note 1)
T
J
= 25°C Unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
D
T
J
T
stg
Value
75
40
6.0
600
200
-55 to +150
-55 to +150
Units
V
V
V
mA
mW
°C
°C
Operating Junction Temperature Range
Storage Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient (Note 1)
Symbol
R
thja
Value
625
Units
°C/W
Note 1. FR-4 board
60
x
70
x
1mm
with minimum recommended pad layout
1/19/2009
Page 1
www.panjit.com
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