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SB120E_09

Description
2 A, 100 V, SILICON, RECTIFIER DIODE, DO-15
Categorysemiconductor    Discrete semiconductor   
File Size46KB,2 Pages
ManufacturerPANJIT
Websitehttp://www.panjit.com.tw/

PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values ​​include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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SB120E_09 Overview

2 A, 100 V, SILICON, RECTIFIER DIODE, DO-15

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MBR240~MBR2200
SCHOTTKY BARRIER RECTIFIERS
VOLTAGE
FEATURES
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-O utilizing
Flame Retardant Epoxy Molding Compound.
• Exceeds environmental standards of MIL-S-19500/228
• For use in low voltage,high frequency inverters ,free wheeling ,
and polarity protection applications.
.300(7.6)
.230(5.8)
1.0(25.4)MIN.
40 to 200 Volts
CURRENT
2.0 Amperes
DO-15
Unit: inch(mm)
.034(.86)
.028(.71)
• In compliance with EU RoHS 2002/95/EC directives
MECHANICALDATA
• Case: DO-15 Molded plastic
• Polarity: Color band denotes cathode
• Mounting Position: Any
• Weight: 0.014 ounces, 0.397 grams
• Terminals: Axial leads, solderable per MIL-STD-750,Method 2026
.140(3.6)
1.0(25.4)MIN.
.104(2.6)
MAXIMUM RATINGS
Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.
PA RA M E TE R
M a xi m um R e c ur r e nt P e a k R e ve r s e V o l t a g e
M a xi m um R M S V o l t a g e
M a xi m um D C B l o c k i ng V o l t a g e
M a xi m um A ve r a g e F o r w a r d R e c t i f i e d C ur r e nt
. 3 7 5 " ( 9 . 5 m m ) l e a d l e ng t h ( s e e f i g 1 )
P e a k F o r w a r d S ur g e C ur r e nt : 8 . 3 m s s i ng l e ha l f s i ne -
w a ve s up e r i m p o s e d o n r a t e d l o a d ( J E D E C m e t ho d )
Ty p i c a l T h e r m a l R e s i s t a n c e ( N o t e 2 )
M a xi m um F o r w a r d V o l t a g e a t 2 . 0 A ( N o t e 1 )
M a xi m um D C R e ve r s e C ur r e nt a t T
J
= 2 5
O
C
R a t e d D C B l o c k i ng Vo l t a g e T
J
= 1 0 0
O
C
O p e r a t i n g J u n c t i o n a n d S t o r a g e Te m p e r a t u r e R a n g
S YM B O L
V
RRM
V
RMS
V
D C
I
F ( A V )
I
F S M
R
θ
J A
V
F
I
R
T
J
, T
S T G
MB R2 4 0
MB R2 4 5
MB R2 5 0
MB R2 6 0
MB R2 8 0
MB R2 9 0 MB R2 1 0 0 MB R2 1 5 0 MB R2 2 0 0
U N IT S
V
V
V
A
A
O
40
28
40
45
3 1 .5
45
50
35
50
60
42
60
80
56
80
2 .0
50
35
90
63
90
100
70
100
150
105
150
200
140
200
C /
W
V
0.7
0.74
0 .0 5
20
0.8
0.9
mA
O
-5 5 to +1 5 0
-65 to +175
C
NOTES:
1.Pulse Test : 300µs pulse with , 1% Duty Cycle.
2Thermal resistance junction to lead P.C.B mounted 0.375”(9.5mm) lead length.
STAD-MAR.20.2009
2
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