SB620F datasheet, PDF - EEWORLD Datasheet

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SB620F: DescriptionSchottky diodes; CategoryDiscrete semiconductor diode; File Size91KB，2 Pages; ManufacturerPANJIT; Websitehttp://www.panjit.com.tw/; Environmental Compliance; PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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SB620F Overview

Schottky diodes

Features

Product Name: Schottky Diode

Product model: SB620F

parameter:

Repetitive reverse voltage peak Vrrm: 20V

Maximum average rectified current Io: 6A

Maximum forward surge current I FSM: 75A

Forward voltage drop VF: 0.55V when IF=6A

Maximum feedback current IR: 200uA when VR=20V

Package: ITO-220AC

SB620F Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	PANJIT
Parts packaging code	TO-220AC
package instruction	ROHS COMPLIANT, PLASTIC, ITO-220AC, 2 PIN
Contacts	3
Reach Compliance Code	_compli
ECCN code	EAR99
Other features	FREE WHEELING DIODE, LOW POWER LOSS
application	EFFICIENCY
Shell connection	ISOLATED
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	0.55 V
JEDEC-95 code	TO-220AC
JESD-30 code	R-PSFM-T2
Maximum non-repetitive peak forward current	75 A
Number of components	1
Phase	1
Number of terminals	2
Maximum operating temperature	125 °C
Minimum operating temperature	-55 °C
Maximum output current	6 A
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	20 V
surface mount	NO
technology	SCHOTTKY
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED

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SB620F~SB660F

ISOLATION SCHOTTKY BARRIER RECTIFIERS

VOLTAGE

FEATURES

• Plastic package has Underwriters Laboratory

Flammability Classification 94V-O utilizing

Flame Retardant Epoxy Molding Compound.

• Exceeds environmental standards of MIL-S-19500/228

• Low power loss, high efficiency.

• Low forwrd voltge, high current capability

• High surge capacity.

• For use in low voltage,high frequency inverters

free wheeling , and polarlity protection applications.

• In compliance with EU RoHS 2002/95/EC directives

20 to 60 Volts

CURRENT

6.0 Ampers

MECHANICAL DATA

• Case: ITO-220AC full molded plastic package

• Terminals: Lead solderable per MIL-STD-750, Method 2026

• Polarity: As marked.

• Mounting Position: Any

• Weight: 0.055 ounces, 1.5615 grams.

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%

PA RA M E TE R

M a xi m um R e c ur r e nt P e a k R e ve r s e V o l t a g e

M a xi m um R M S V o l t a g e

M a xi m um D C B l o c k i ng V o l t a g e

M a xi m um A ve r a g e F o r w a r d C ur r e nt a t T c = 7 5

P e a k F o r w a r d S ur g e C ur r e nt : 8 . 3 m s s i ng l e ha l f s i ne - w a ve

s up e r i m p o s e d o n r a t e d l o a d ( J E D E C m e t ho d )

M a xi m um F o r w a r d V o l t a g e a t 6 . 0 A

M a xi m um D C R e ve r s e C ur r e nt T

= 2 5

a t R a t e d D C B l o c k i ng V o l t a g e T

= 1 0 0

Ty p i c a l T h e r m a l R e s i s t a n c e

O p e r a t i n g J u n c t i o n Te m p e r a t u r e R a n g e

S t o r a g e Te m p e r a t u r e R a n g e

S YM B O L S B 6 2 0 F S B 6 3 0 F S B 6 4 0 F S B 6 5 0 F S B 6 6 0 F

RRM

RMS

F ( A V )

F S M

J C

S TG

-5 5 to +1 2 5

0 .5 5

0 .2

-5 5 to +1 5 0

6 .0

0 .7

0 .1

U N IT S

C / W

NOTES:

Both Bonding and Chip structure are available.

STAD-APR.27.2009

PAGE . 1

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