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PJSD05CTM-R1-10001

Description
Transient Suppressor,
CategoryDiscrete semiconductor    diode   
File Size311KB,5 Pages
ManufacturerPANJIT
Websitehttp://www.panjit.com.tw/

PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values ​​include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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PJSD05CTM-R1-10001 Overview

Transient Suppressor,

PJSD05CTM-R1-10001 Parametric

Parameter NameAttribute value
MakerPANJIT
Reach Compliance Codecompliant
ECCN codeEAR99

PJSD05CTM-R1-10001 Preview

Download Datasheet
PJSD05CTM
BI-DIRECTIONAL ESD PROTECTION DIODE
This Penta has been designed to Protect Sensitive Equipment against ESD and to prevent Latch-Up
events in CMOS circuitry operating at 5Vdc and below.This offers an integrated solution to protect up to
data line where the board space is a premium.
SPECIFICATION FEATURES
• 100W Power Dippsipation (8/20µs Waveform)
• Low Leakage Current,Maximum of 1µA@5Vdc
0.010(0.25)
O
SOD-923
Unit
inch(mm)
• IEC 61000-4-2 ESD 15kV air, 8kV Contact Compliance
• Lead free in comply with EU RoHS 2002/95/EC directives.
• Green molding compound as per IEC61249 Std. . (Halogen Free)
0.026(0.65)
0.021(0.55)
0.034(0.85)
0.029(0.75)
APPLICATIONS
• Video I/O ports protection
• Set Top Boxes
• Portable Instrumentation
• Case : SOD-923, Plastic
• Terminals : Solderable per MIL-STD-750, Method 2026
• Approx. Weight : 0.0005 grams
• Marking : H
0.007(0.18)
0.003(0.08)
0.042(1.05)
0.037(0.95)
0.018(0.45)
0.013(0.35)
MAXIMUM RATINGS
Rating
Peak Pulse Power (8/20
µ
s Waveform)
Maximum Peak Pulse Current (8/20
µ
s Waveform)
ESD Voltage (HBM)
O p e r a t i n g J u n c t i o n a n d S t o r a g e Te m p e r a t u r e R a n g e
Symbol
Value
100
5.0
>25
-55 to 125
Units
W
A
kV
C
P
PP
I
PP
V
ESD
T
J
, T
S TG
ELECTRICAL CHARACTERISTICS (T
A
=25
o
C)
Parameter
Reverse Stand-Off Voltage
Reverse Breakdown Voltage
Reverse Leakage Current
Clamping Voltage (8/20
µ
s)
Off State Junction Capacitance
Symbol
V
WRM
V
BR
I
R
V
C
C
J
Conditions
Min.
-
Typ.
-
-
-
-
-
Max.
5.0
7.82
1.0
12.5
30
0.005(0.15)
• Very low Clamping voltage
Units
V
V
µA
V
pF
I
BR
=1mA
V
R
=5V
I
PP
=1A
0 Vdc Bias f=1MHz
5.78
-
-
-
REV.0.6-JAN.14.2009
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