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UF1602CT

Description
Rectifier Diode, 8A, 200V V(RRM)
CategoryDiscrete semiconductor    diode   
File Size130KB,2 Pages
ManufacturerGood-Ark
Environmental Compliance
Suzhou Gotech is a complete and comprehensive manufacturer of design, manufacturing, packaging and sales in the domestic semiconductor discrete device diode industry. From the independent development of front-end chips to various packaging technologies of back-end finished products, it has formed a complete industrial chain. The main products include leadless integrated circuit products and discrete device products with the latest packaging technology, automotive rectifier diodes, power modules, rectifier diode chips, silicon rectifier diodes, switching diodes, Zener diodes, micro bridge piles, military fuses, photovoltaic bypass modules, etc., with a total of more than 50 series and more than 1,500 varieties. The products are widely used in many fields such as aerospace, automobiles, green lighting, IT, household appliances and power supply devices for large equipment. Design and develop silver paste for solar cells and various electronic pastes, and develop and mass produce various new sensors in the field of the Internet of Things.
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Rectifier Diode, 8A, 200V V(RRM)

UF1602CT Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerGood-Ark
Reach Compliance Codecompliant
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1 V
Maximum non-repetitive peak forward current125 A
Maximum operating temperature150 °C
Maximum output current8 A
Maximum repetitive peak reverse voltage200 V
Maximum reverse recovery time0.05 µs
surface mountNO

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UF1600CT thru UF1608CT
Glass Passivated High Efficient Rectifiers
Reverse Voltage 50 to 800 Volts Forward Current 16.0 Amperes
Features
Plastic package has Underwriters Laboratory Flammability
Classification 94V-O utilizing Flame Retardant Epoxy Molding
Compound.
Exceeds environmental standards of MIL-S-19500/228
Low power loss, high efficiency.
Low forwrd voltge, high current capability
High surge capacity.
Ultra fast recovery times, high voltage.
Both normal and Pb free product are available :
Normal : 80~95% Sn, 5~20% Pb
Pb free: 98.5% Sn above
TO-220AB
Mechanical Data
Case: TO-220AB full molded plastic package
Terminals: Lead solderable per MIL-STD-202, Method 208
Polarity: As marked
Standard packaging: Any
Weight: 0.08 ounces, 2.24 grams
Maximum Ratings and Electrical Characteristics
Ratings at 25
o
C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz,
resistive or inductive load. For capacitive load, derate current by 20%
Parameter
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current at T
C
=100
o
C
Peak forward surge current 8.3ms single half sine-wave
superimposed on rated load (JEDEC Method)
Maximum instantaneous forward voltage at 8.0A
Maximum DC reverse current
at rated DC blocking voltage
Maximum reverse recovery time at
I
F
=0.5A, I
R
=1.0A, I
rr
=0.25A (Note 1)
Typical junction capacitance at 4.0V, 1MHz (Note 2)
Typical thermal resistance (Note 3)
Operating junction and storage temperature range
Notes:
Symbol
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
I
R
t
rr
C
J
R
θ
JC
T
J
, T
STG
UF
1600C T
50
35
50
UF
1601C T
100
70
100
UF
1602C T
200
140
200
UF
1603C T
300
210
300
16.0
125.0
UF
1604C T
400
280
400
UF
1606C T
600
420
600
UF
1608C T
800
560
800
Unit
Volts
Volts
Volts
Amps
Amps
1.0
10.0
500
50
170.0
2.0
1.3
1.7
Volts
uA
@T
A
=25
o
C
@T
A
=125
o
C
100
130.0
o
nS
pF
C/W
o
-55 to +150
C
1. Reverse Recovery Test Conditions: I
F
=0.5A, I
R
=1A, I
rr
=0.25A.
2. Measured at 1 MHz and applied reverse voltage of 4.0 VDC.
3. Thermal resistance from Junction to ambient and from junction to lead 0.375" (9.5mm) P.C.B mounted.
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