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BAS316

Description
Rectifier Diode, 1 Element, 0.25A, 100V V(RRM), Silicon,
CategoryDiscrete semiconductor    diode   
File Size287KB,4 Pages
ManufacturerYangzhou Yangjie Electronic Technology Co., Ltd.
Websitehttp://www.21yangjie.com/
Environmental Compliance
Yangzhou Yangjie Electronic Technology Co., Ltd. was established on August 2, 2006 with a registered capital of RMB 472 million. In January 2014, the company was listed on the Shenzhen Stock Exchange's Growth Enterprise Market with the stock code 300373. In 2017, the company's operating income was RMB 1.47 billion. The company integrates R&D, production and sales, and is professionally committed to the industrial development of power semiconductor chips and device manufacturing, integrated circuit packaging and testing, etc. The company's main products are various power electronic device chips, power diodes, rectifier bridges, high-power modules, DFN/QFN products, SGT MOS and silicon carbide SBD, silicon carbide JBS, etc. The products are widely used in many fields such as consumer electronics, security, industrial control, automotive electronics, and new energy.
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BAS316 Overview

Rectifier Diode, 1 Element, 0.25A, 100V V(RRM), Silicon,

BAS316 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerYangzhou Yangjie Electronic Technology Co., Ltd.
Reach Compliance Codeunknown
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeR-PDSO-G2
JESD-609 codee3
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current0.25 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum power dissipation0.2 W
Maximum repetitive peak reverse voltage100 V
Maximum reverse recovery time0.004 µs
surface mountYES
Terminal surfaceTin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED

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BAS316
 
 
RoHS
COMPLIANT
High Speed Switching Diode
Features
● V
R
100V
I
FAV
250mA
Typical Applications
● Extreme fast switches
Mechanical Data
Package:
SOD323
Terminals:
Tin plated leads, solderable per
J-STD-002 and JESD22-B102
Polarity:
Cathode line denotes the cathode end
 
Marking:
A6·
Maximum Ratings
(Ta=25℃ Unless otherwise specified
PARAMETER
SYMBOL
UNIT
Conditions
VALUE
Repetitive peak reverse voltage
Peak forward surge current
Average forward current
Power dissipation
Thermal Resistance
Maximum junction temperature
Storage temperature range
V
RRM
I
FSM
I
FAV
P
tot
R
thJA
T
j
T
stg
V
A
mA
mW
K/W
t
p
=1μs
100
2
250
200
625
-55 to +150
-55 to +150
Electrical Characteristics(Ta=25℃ Unless otherwise specified)
PARAMETER
SYMBOL
UNIT
Conditions
Min
Max
I
F
=1mA
I
F
=10mA
Maximum Forward voltage
V
F
V
I
F
=50mA
I
F
=150mA
I
R
Maximum Reverse current
I
R
μA
V
R
=75V
nA
V
R
=20V
0.715
0.855
1.00
1.25
25
1.0
1/4
S-S1484
Rev.1.1, 24-Jan-19
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com
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