TA1300L datasheet, PDF - EEWORLD Datasheet

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TA1300L: DescriptionSilicon Surge Protector, 160V V(BO) Max, 25A, PLASTIC, SMA, 2 PIN; CategoryAnalog mixed-signal IC Trigger device; File Size46KB，4 Pages; ManufacturerLITEON; Websitehttp://optoelectronics.liteon.com/en-global/Home/index; Lite-On began producing LED lamps in 1975; the company has steadily grown to become one of the world's largest manufacturers of optoelectronics products by providing customers with visible and infrared product solutions. High-volume production of commercial and application-specific products, as well as strong R&D and vertical integration capabilities have proven to be key and differentiating factors in Lite-On's success.

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TA1300L Overview

Silicon Surge Protector, 160V V(BO) Max, 25A, PLASTIC, SMA, 2 PIN

TA1300L Parametric

Parameter Name	Attribute value
Maker	LITEON
package instruction	SMALL OUTLINE, R-PDSO-C2
Contacts	2
Reach Compliance Code	compliant
ECCN code	EAR99
Maximum breakover voltage	160 V
Configuration	SINGLE
Maximum off-state DC voltage	120 V
Maximum holding current	800 mA
JESD-30 code	R-PDSO-C2
On-state non-repetitive peak current	25 A
Number of components	1
Number of terminals	2
Maximum operating temperature	150 °C
Minimum operating temperature	-40 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Certification status	Not Qualified
surface mount	YES
Terminal form	C BEND
Terminal location	DUAL
Trigger device type	SILICON SURGE PROTECTOR

TA1300L Preview

LITE-ON

SEMICONDUCTOR

TA0640L thru TA4000L

Bi-Directional

VDRM

IPP

58 to 360

Volts

Amperes

SURFACE MOUNT

THYRISTOR SURGE PROTECTIVE DEVICE

FEATURES

Oxide Glass Passivated Junction

Bidirectional protection in a single device

Surge capabilities up to 50A @ 10/1000us or 150A

@ 8/20us

High off state Impedance and low on state voltage

Plastic material has UL flammability classification

94V-0

SMA

DIM.

MIN.

4.06

2.29

1.27

0.15

4.83

0.05

2.01

0.76

MAX.

4.57

2.92

1.63

0.31

5.59

0.20

2.62

1.52

MECHANICAL DATA

Case : Molded plastic

Polarity : Denotes none cathode band

Weight : 0.064 grams

All Dimensions in millimeter

MAXIMUM RATINGS

CHARACTERISTICS

Non-repetitive peak impulse current @ 10/1000us

Non-repetitive peak On-state current @ 8.3ms (one half cycle)

Junction temperature range

storage temperature range

SYMBOL

VALUE

UNIT

℃

TSM

STG

-40 to +150

-55 to +150

THERMAL RESISTANCE

CHARACTERISTICS

Junction to leads

Junction to ambient on print circuit (on recommended pad layout)

Typical positive temperature coefficient for brekdown voltage

SYMBOL

VALUE

UNIT

℃

Rth

(J-L)

Rth

(J-A)

△

100

0.1

MAXIMUM RATED SURGE WAVEFORM

WAVEFORM

2/10 us

8/20 us

10/160 us

10/560 us

10/700 us

10/1000 us

STANDARD

GR-1089-CORE

IEC 61000-4-5

FCC Part 68

ITU-T K20/K21

GR-1089-CORE

(A)

150

, PEAK PULSE CURRENT (%)

100

Peak value (Ipp)

tr= rise time to peak value

tp= Decay time to half value

Half value

TIME

REV.

29-April-2003, KSWA02

ELECTRICAL CHARACTERISTICS

@ T

℃

unless otherwise specified

TA0640L thru TA4000L

PARAMETER

RATED

REPETITIVE

OFF-STATE

VOLTAGE

OFF-STATE

LEAKAGE

CURRENT

@ V

DRM

BREAKOVER

VOLTAGE

ON-STATE

VOLTAGE

@ I

=1.0A

BREAKOVER

CURRENT

HOLDING

CURRENT

OFF-STATE

CAPACITANCE

SYMBOL

UNITS

DRM

Volts

DRM

Volts

BO+

H-

H+

LIMIT

TA0640L

TA0720L

TA0900L

TA1100L

TA1300L

TA1500L

TA1800L

TA2300L

TA2600L

TA3100L

TA3500L

TA4000L

Max

Min

Max

Min

Max

Typ

120

140

160

190

220

275

320

360

130

160

180

220

265

300

350

400

450

3.5

800

150

800

100

SYMBOL

DRM

PARAMETER

Stand-off Voltage

Leakage current at stand-off voltage

Breakdown voltage

Breakdown current

Breakover voltage

Breakover current

DRM

Holding current

On state voltage

Peak pulse current

Off state capacitance

Note: 1

Note: 2

REV.

29-April-2003, KSWA02

NOTES: 1. I

> (V

) If this criterion is not obeyed, the T

SPD

Triggers but does not return correctly to high-resistance state.

The Surge recovery time does not exceed 30ms.

2. Off-state capacitance measured at f=1.0MHz; 1.0V

RMS

signal; VR=2V

bias.

RATING AND CHARACTERISTICS CURVES

TA0640L thru TA4000L

FIG.1 - OFF STATE CURRENT vs JUNCTION TEMPERATURE FIG. 2 - RELATIVE VARIATION OF BREAKDOWN VOLTAGE

vs JUNCTION TEMPERATURE

100

1.20

NORMALIZED BREAKDOWN VOLTAGE

DRM)

, OFF STATE CURRENT (uA)

1.15

1.10

)

=25

℃

)

1.0

DRM

=50V

1.05

0.1

1.0

0.01

0.95

0.001

-25

100

125

150

0.90

-50

-25

100

125

150

175

, JUNCTION TEMPERATURE (

℃

)

, JUNCTION TEMPERATURE (

℃

)

FIG. 3 - RELATIVE VARIATION OF BREAKOVER VOLTAGE

vs JUNCTION TEMPERATURE

1.10

FIG. 4 - ON STATE CURRENT vs ON STATE VOLTAGE

100

NORMALIZED BREAKOVER VOLTAGE

1.05

)

=25

℃

)

(T)

, ON STATE CURRENT

1.0

= 25

℃

0.95

-50

-25

100

125

150

175

, JUNCTION TEMPERATURE (

℃

)

V (T); ON STATE VOLTAGE

FIG. 5 - RELATIVE VARIATION OF HOLDING CURRENT

vs JUNCTION TEMPERATURE

FIG. 6 - RELATIVE VARIATION OF JUNCTION

CAPACITANCE vs REVERSE VOLTAGE BIAS

NORMALIZED HOLDING CURRENT

1.5

IH (T

)

IH (T

=25

℃

)

0.5

NORMALIZE CAPACITANCE

(VR)

(VR = 1V)

Tj =25

℃

f=1MHz

RMS

= 1V

-50

-25

100

125

0.1

100

, JUNCTION TEMPERATURE (

℃

)

VR, REVERSE VOLTAGE

REV.

29-Apil-2003, KSWA02

TYPICAL CIRCUIT APPLICATIONS

TA0640L thru TA4000L

FUSE

RING

TSPD 1

TELECOM

EQUIPMENT

E.G. MODEM

TIP

RING

PTC

TSPD 1

TELECOM

EQUIPMENT

E.G. ISDN

TSPD 2

TIP

PTC

RING

PTC

TSPD 2

TSPD 1

TSPD 3

TELECOM

EQUIPMENT

E.G. LINE

CARD

TIP

PTC

The PTC (Positive Temperature Coefficient) is an overcurrent protection device

REV.

29-April-2003, KSWA02

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