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PJE8438

Description
50V N-Channel Enhancement Mode MOSFET – ESD Protected
File Size315KB,6 Pages
ManufacturerPANJIT
Websitehttp://www.panjit.com.tw/

PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values ​​include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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50V N-Channel Enhancement Mode MOSFET – ESD Protected

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PPJE8438
50V N-Channel Enhancement Mode MOSFET – ESD Protected
Voltage
Features
RDS(ON) , VGS@10V, ID@500mA<1.45Ω
RDS(ON) , VGS@4.5V, ID@200mA<1.95Ω
RDS(ON) , VGS@2.5V, ID@100mA<4.0Ω
RDS(ON) , VGS@1.8V, ID@10mA<4.0Ω(typ.)
Advanced Trench Process Technology
ESD Protected 2KV HBM
Specially Designed for Relay driver, Speed line drive, etc.
Lead free in compliance with EU RoHS 2011/65/EU directive.
Green molding compound as per IEC61249 Std. (Halogen Free)
50 V
Current
360mA
SOT-523
Unit : inch(mm)
Mechanical Data
Case: SOT-523 Package
Terminals: Solderable per MIL-STD-750, Method 2026
Approx. Weight: 0.00007 ounces, 0.002 grams
Marking: E38
Maximum Ratings and Thermal Characteristics
(T
A
=25 C unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Power Dissipation
T
A
=25
o
C
Derate above 25
o
C
SYMBOL
V
DS
V
GS
I
D
I
DM
P
D
T
J
,T
STG
R
θJA
UNITS
V
V
mA
mA
mW
mW/
o
C
o
o
LIMIT
50
+20
360
1200
300
2.4
-55~150
417
o
Operating Junction and Storage Temperature Range
Typical Thermal resistance
-
Junction to Ambient
(Note 3)
C
C/W
June 17,2015-REV.00
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