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M52D64164A-2E

Description
LVCMOS compatible with multiplexed address
File Size972KB,47 Pages
ManufacturerESMT
Websitehttp://www.esmt.com.tw/
Elite Semiconductor Memory Technology Inc. (ESMT) is a professional IC design company founded by Dr. Hu Zhao in June 1998. Its headquarters is located in Hsinchu Science Park, Taiwan. The company's main business includes research, development, manufacturing, sales and related technical services of IC products. It was listed on the Taiwan Stock Exchange in March 2002.
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M52D64164A-2E Overview

LVCMOS compatible with multiplexed address

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ESMT
Mobile SDRAM
M52D64164A (2E)
Operation Temperature Condition -40°C~85°C
1M x 16 Bit x 4 Banks
Mobile Synchronous DRAM
FEATURES
1.8V power supply
LVCMOS compatible with multiplexed address
Four banks operation
MRS cycle with address key programs
- CAS Latency (2 & 3)
- Burst Length (1, 2, 4, 8 & full page)
- Burst Type (Sequential & Interleave)
EMRS cycle with address
All inputs are sampled at the positive going edge of the
system clock
Special function support
-
PASR (Partial Array Self Refresh)
-
TCSR (Temperature Compensated Self Refresh)
-
DS (Driver Strength)
DQM for masking
Auto & self refresh
64ms refresh period (4K cycle)
ORDERING INFORMATION
Product ID
M52D64164A-5BIG2E
M52D64164A-6BIG2E
M52D64164A-7BIG2E
Max Freq.
200MHz
166MHz
143MHz
Package
54 Ball FBGA
54 Ball FBGA
54 Ball FBGA
Comments
Pb-free
Pb-free
Pb-free
GENERAL DESCRIPTION
The M52D64164A is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16
bits. Synchronous design allows precise cycle controls with the use of system clock I/O transactions are possible on
every clock cycle. Range of operating frequencies, programmable burst lengths and programmable latencies allow the
same device to be useful for a variety of high bandwidth, high performance memory system applications.
BALL CONFIGURATION (TOP VIEW)
(BGA54, 8mmX8mmX1mm Body, 0.8mm Ball Pitch)
1
2
3
4
5
6
7
8
9
A
VSS
DQ15
VSSQ
VDDQ
DQ0
VDD
B
DQ14
DQ13
VDDQ
VSSQ
DQ2
DQ1
C
DQ12
DQ11
VSSQ
VDDQ
DQ4
DQ3
D
DQ10
DQ9
VDDQ
VSSQ
DQ6
DQ5
E
DQ8
NC
VSS
VDD
LDQM
DQ7
F
UDQM
CLK
CKE
CAS
RAS
WE
G
NC
A11
A9
BA0
BA1
CS
H
A8
A7
A6
A0
A1
A10
J
VSS
A5
A4
A3
A2
VDD
Elite Semiconductor Memory Technology Inc.
Publication Date: Nov. 2012
Revision: 1.0
1/47
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