EN29LV040A
EN29LV040A
4 Megabit (512K x 8-bit ) Uniform Sector,
CMOS 3.0 Volt-only Flash Memory
FEATURES
•
Fully compatible with EN29LV040
•
Single power supply operation
- Full voltage range: 2.7-3.6 volt read and write
operations for battery-powered applications.
- Regulated voltage range: 3.0-3.6 volt read
and write operations for high performance
3.3 volt microprocessors.
•
High performance
- Access times as fast as 45 ns
•
Low power consumption (typical values at 5
MHz)
- 7 mA typical active read current
- 15 mA typical program/erase current
- 1
μA
typical standby current (standard access
time to active mode)
•
-
-
-
-
Flexible Sector Architecture:
Eight 64 Kbyte sectors
Supports full chip erase
Individual sector erase supported
Sector protection and unprotection:
Hardware locking of sectors to prevent
program or erase operations within individual
sectors
- Byte/Word program time: 8µs typical
- Sector erase time: 500ms typical
•
JEDEC Standard program and erase
commands
•
JEDEC standard
DATA
polling and toggle
bits feature
•
Single Sector and Chip Erase
•
Embedded Erase and Program Algorithms
•
Erase Suspend / Resume modes:
Read or program another Sector during
Erase Suspend Mode
•
triple-metal double-poly triple-well CMOS
Flash Technology
•
Low Vcc write inhibit < 2.5V
•
minimum 100K program/erase endurance
da0.
cycle
•
Package options
- 8mm x 20mm 32-pin TSOP (Type 1)
- 8mm x 14mm 32-pin TSOP (Type 1)
- 32-pin PLCC
- 32-pin PDIP
•
Commercial and industrial Temperature
Range
•
High performance program/erase speed
GENERAL DESCRIPTION
The EN29LV040A is a 4-Megabit, electrically erasable, read/write non-volatile flash memory,
organized as 524,288 bytes. Any byte can be programmed typically in 8µs. The EN29LV040A
features 3.0V voltage read and write operation, with access times as fast as 45ns to eliminate the
need for WAIT states in high-performance microprocessor systems.
The EN29LV040A has separate Output Enable (
OE
), Chip Enable (
CE
), and Write Enable (WE)
controls, which eliminate bus contention issues. This device is designed to allow either single
Sector or full chip erase operation, where each Sector can be individually protected against
program/erase operations or temporarily unprotected to erase or program. The device can sustain a
minimum of 100K program/erase cycles on each Sector.
This Data Sheet may be revised by subsequent versions
1
or modifications due to changes in technical specifications.
©2003 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. B, Issue Date: 2007/01/05
EN29LV040A
TABLE 3. OPERATING MODES
4M FLASH USER MODE TABLE
Operation
Read
Write
CMOS Standby
TTL Standby
Output Disable
Reset
Temporary
Sector Unprotect
CE#
L
L
V
cc
±
0.3V
H
L
X
X
OE#
L
H
X
X
H
X
X
WE#
H
L
X
X
H
X
X
A0-A18
A
IN
A
IN
X
X
X
X
A
IN
DQ0-DQ7
D
OUT
D
IN
High-Z
High-Z
High-Z
High-Z
D
IN
Notes:
L=logic low= V
IL
, H=Logic High= V
IH
, V
ID
=11
±
0.5V, X=Don’t Care (either L or H, but not floating!),
D
IN
=Data In, D
OUT
=Data Out, A
IN
=Address In
TABLE 4. DEVICE IDENTIFICTION (Autoselect Codes)
4M FLASH MANUFACTURER/DEVICE ID TABLE
A18
to
A16
X
X
A15
to
A10
X
X
A5
to
A2
X
X
Description
Manufacturer
ID: Eon
Device ID
Sector
Protection
Verification
CE#
OE#
WE#
A9
2
A8
1
A7
A6
A1
A0
DQ7 to DQ0
L
L
L
L
H
H
V
ID
V
ID
H
X
X
L
L
L
L
L
H
1Ch
4Fh
01h
X
L
L
H
SA
X
V
ID
X
X
L
X
H
L
(Protected)
00h
(Unprotected)
Note:
1. If a manufacturing ID is read with A8=L, the chip will output a configuration code 7Fh. A further Manufacturing ID must be
read with A8=H.
2. A9 = VID is for HV A9 Autoselect mode only. A9 must be
≤
Vcc (CMOS logic level) for Command Autoselect Mode.
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
5
©2003 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. B, Issue Date: 2007/01/05
Talking
京公网安备 11010802033920号
EEWORLD
