UF1004FCT_T0_10001 datasheet, PDF

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UF1004FCT_T0_10001: DescriptionRectifier Diode, 1 Phase, 2 Element, 5A, 400V V(RRM), Silicon, TO-220AB, ITO-220AB, 3 PIN; CategoryDiscrete semiconductor diode; File Size104KB，4 Pages; ManufacturerPANJIT; Websitehttp://www.panjit.com.tw/; Environmental Compliance; PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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UF1004FCT_T0_10001 Overview

Rectifier Diode, 1 Phase, 2 Element, 5A, 400V V(RRM), Silicon, TO-220AB, ITO-220AB, 3 PIN

UF1004FCT_T0_10001 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	PANJIT
package instruction	ITO-220AB, 3 PIN
Reach Compliance Code	not_compliant
ECCN code	EAR99
Other features	LOW POWER LOSS
application	EFFICIENCY
Shell connection	ISOLATED
Configuration	COMMON CATHODE, 2 ELEMENTS
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	1.3 V
JEDEC-95 code	TO-220AB
JESD-30 code	R-PSFM-T3
Maximum non-repetitive peak forward current	125 A
Number of components	2
Phase	1
Number of terminals	3
Maximum operating temperature	150 °C
Minimum operating temperature	-55 °C
Maximum output current	5 A
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Maximum repetitive peak reverse voltage	400 V
Maximum reverse current	1 µA
Maximum reverse recovery time	0.05 µs
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED

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UF1000FCT~UF1006FCT

ULTRAFAST RECOVERY RECTIFIERS

VOLTAGE

FEATURES

• Plastic package has Underwriters Laboratory

Flammability Classification 94V-O utilizing

Flame Retardant Epoxy Molding Compound.

• Exceeds environmental standards of

MIL-S-19500/228

• Low power loss, high efficiency.

• Low forwrd voltge, high current capability

• High surge capacity.

• Ultra fast recovery time, high voltage.

•

Lead free in comply with EU RoHS 2002/95/EC directives

50 to 600 Volts

CURRENT

10.0 Amperes

MECHANCALDATA

• Case: ITO-220AB full molded plastic package

• Terminals: Lead solderable per MIL-STD-750, Method 2026

• Polarity: As marked.

• Standard packaging: Any

• Weight: 0.0655 ounces, 1.859 grams.

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%

PA RA M E TE R

M a xi m um R e c ur r e nt P e a k R e ve r s e V o l t a g e

M a xi m um R M S V o l t a g e

M a xi m um D C B l o c k i ng V o l t a g e

M a xi m um A ve r a g e F o r w a r d C ur r e nt a t T

= 1 0 0

P e a k F o r w a r d S ur g e C ur r e nt : 8 . 3 m s s i ng l e ha l f s i ne -

w a ve s up e r i m p o s e d o n r a t e d l o a d ( J E D E C m e t ho d )

M a xi m um F o r w a r d V o l t a g e a t 5 . 0 A

M a xi m um D C R e ve r s e C ur r e nt T

= 2 5

a t R a t e d D C B l o c k i ng V o l t a g e T

= 1 2 5

Ty p i c a l J u n c t i o n C a p a c i t a n c e ( N o t e 1 )

M a x i m u m R e v e r s e R e c o v e r y Ti m e ( N o t e 2 )

Ty p i c a l T h e r m a l R e s i s t a n c e ( N o t e 3 )

O p e r a t i n g J u n c t i o n a n d S t o r a g e Te m p e r a t u r e R a n g e

S YM B O L

U F 1 0 0 0 F C T U F 1 0 0 1 F C T U F 1 0 0 2 F C T U F 1 0 0 3 F C T U F 1 0 0 4 F C T U F 1 0 0 6 F C T

U N I T S

RRM

RMS

D C

F ( A V )

F S M

J C

, T

S T G

-5 5 to +1 5 0

1 .0

500

100

200

140

200

125

300

210

300

400

280

400

600

420

600

1 .3 0

1 .7 0

µA

C / W

NOTES:

1. Measured at 1 MHz and applied reverse voltage of 4.0 VDC.

2. Reverse Recovery Test Conditions: I

=.5A, I

=1A, Irr=.25A.

3. Thermal resistance from Junction to case.

4. Both Bonding and Chip structure are available.

STAD-MAR.05.2009

PAGE . 1

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