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Datasheet> All Categories > storage> storage> NT512T64UH8A0FM-5A
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NT512T64UH8A0FM-5A

Description
DDR DRAM Module, 64MX64, 0.6ns, CMOS, SODIMM-200
Categorystorage    storage   
File Size1MB，17 Pages
ManufacturerNanya
Websitehttp://www.nanya.com/cn
Nanya Technology Co., Ltd. aims to become the best DRAM (dynamic random access memory) supplier. It emphasizes customer service and strengthens product R&D and manufacturing through close cooperation with partners, thereby providing customers with comprehensive products and system solutions. In the face of the growing niche DRAM market, Nanya Technology not only provides products ranging from 128Mb to 8Gb, but also continues to expand product diversification. The main application markets include digital TV, set-top box (STB), network communication, tablet computer and other smart electronic systems, automotive and industrial products. At the same time, in order to meet the needs of the rapidly growing mobile and wearable device market, Nanya Technology is more focused on the research and development and manufacturing of low-power memory products. In recent years, Nanya Technology has actively operated in the niche memory market, focusing on the research and development of low-power and customized core product lines. In terms of process progress, it has also introduced 20nm process technology and is committed to the production of DDR4 and LPDDR4 products, hoping to further enhance its overall competitiveness. Nanya Technology will also continue to strengthen its high value-added niche memory products and perfect customer service, enhance core business operating performance, ensure the rights and interests of all shareholders, and create sustainable business value for the company.
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NT512T64UH8A0FM-5A Overview

DDR DRAM Module, 64MX64, 0.6ns, CMOS, SODIMM-200

NT512T64UH8A0FM-5A Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerNanya
Parts packaging codeMODULE
package instructionDIMM, DIMM200,24
Contacts200
Reach Compliance Codecompliant
ECCN codeEAR99
access modeDUAL BANK PAGE BURST
Maximum access time0.6 ns
Other featuresAUTO/SELF REFRESH
Maximum clock frequency (fCLK)200 MHz
I/O typeCOMMON
JESD-30 codeR-XDMA-N200
JESD-609 codee4
memory density4294967296 bit
Memory IC TypeDDR DRAM MODULE
memory width64
Number of functions1
Number of ports1
Number of terminals200
word count67108864 words
character code64000000
Operating modeSYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize64MX64
Output characteristics3-STATE
Package body materialUNSPECIFIED
encapsulated codeDIMM
Encapsulate equivalent codeDIMM200,24
Package shapeRECTANGULAR
Package formMICROELECTRONIC ASSEMBLY
Peak Reflow Temperature (Celsius)NOT SPECIFIED
power supply1.8 V
Certification statusNot Qualified
refresh cycle8192
self refreshYES
Maximum standby current0.04 A
Maximum slew rate0.98 mA
Maximum supply voltage (Vsup)1.9 V
Minimum supply voltage (Vsup)1.7 V
Nominal supply voltage (Vsup)1.8 V
surface mountNO
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceGold (Au)
Terminal formNO LEAD
Terminal pitch0.6 mm
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED

NT512T64UH8A0FM-5A Preview

NT256T64UH4A0FM / NT512T64UH8A0FM
NT256T64UH4A0FN / NT512T64UH8A0FN (Green)
256MB: 32M x 64 / 512MB: 64M x 64
PC2-3200 / PC2-4200 Unbuffered DDR2 SO-DIMM
200 pin Unbuffered DDR2 SO-DIMM
Based on DDR2-400/533 32Mx16 SDRAM
Features
• 200-Pin Small Outline Dual In-Line Memory Module (SO-DIMM)
• 32Mx64 and 64Mx64 Unbuffered DDR2 SO-DIMM based on
32Mx16 DDR SDRAM devices.
• Performance:
PC2-3200
Speed Sort
DIMM
f
CK
t
CK
f
DQ
Latency
Clock Frequency
Clock Cycle
DQ Burst Frequency
5A
3
200
5
400
PC2-4200
37B
4
266
3.75
533
MHz
ns
MHz
Unit
• Data is read or written on both clock edges
• DRAM DLL aligns DQ and DQS transitions with clock transitions.
• Address and control signals are fully synchronous to positive
clock edge
• Programmable Operation:
- DIMM
Latency: 3, 4, 5
- Burst Type: Sequential or Interleave
- Burst Length: 4, 8
- Operation: Burst Read and Write
• Auto Refresh (CBR) and Self Refresh Modes
• Automatic and controlled precharge commands
• 13/10/1 Addressing (256MB)
13/10/2 Addressing (512MB)
• 7.8
µs
Max. Average Periodic Refresh Interval
• Serial Presence Detect
• Gold contacts
• SDRAMs in 84-ball FBGA Package
• Intended for 200 MHz and 266MHz applications
• Inputs and outputs are SSTL-18 compatible
• V
DD
= V
DDQ
= 1.8V ± 0.1V
• SDRAMs have 4 internal banks for concurrent operation
• Module has one physical bank
• Differential clock inputs
Description
NT256T64UH4A0FM, NT256T64UH4A0FN, NT512T64UH8A0FM, and NT512T64UH8A0FN are unbuffered 200-Pin Double Data Rate 2
(DDR2) Synchronous DRAM Small Outline Dual In-Line Memory Module (SO-DIMM), organized as one rank of 32x64 and two ranks of
64x64 high-speed memory array. Modules use four 32Mx16 (256MB) or eight 32Mx16 (512MB) 84-ball FBGA packaged devices. These
DIMMs are manufactured using raw cards developed for broad industry use as reference designs. The use of these common design files
minimizes electrical variation between suppliers. All NANYA DDR2 SDRAM DIMMs provide a high-performance, flexible 8-byte interface in
a 2.66” long space-saving footprint.
The DIMM is intended for use in applications operating up to 200 MHz (266MHz) clock speeds and achieves high-speed data transfer rates
of up to 400 MHz (533MHz). Prior to any access operation, the device
latency and burst type/ length/operation type must be
programmed into the DIMM by address inputs A0-A12 and I/O inputs BA0 and BA1 using the mode register set cycle.
The DIMM uses serial presence-detect implemented via a serial EEPROM using a standard IIC protocol. The first 128 bytes of serial PD
data are programmed and locked during module assembly. The remaining 128 bytes are available for use by the customer.
Ordering Information
Part Number
NT256T64UH4A0FM –5A
NT256T64UH4A0FN –5A
NT256T64UH4A0FM –37B
NT256T64UH4A0FN –37B
NT512T64UH8A0FM –5A
NT512T64UH8A0FN –5A
NT512T64UH8A0FM –37B
NT512T64UH8A0FN –37B
Speed
DDR2-400 PC2-3200 200MHz (5ns @ CL = 3)
32Mx64
DDR2-533 PC2-4200 266MHz (3.75ns @ CL = 4)
1.8V
DDR2-400 PC2-3200 200MHz (5ns @ CL = 3)
64Mx64
DDR2-533 PC2-4200 266MHz (3.75ns @ CL = 4)
Gold
Organization
Power
Leads
Note
Green
Green
Green
Green
REV 1.2
11/02/2005
1
NANYA reserves the right to change products and specifications without notice.
© NANYA TECHNOLOGY CORPORATION
NT256T64UH4A0FM / NT512T64UH8A0FM
NT256T64UH4A0FN / NT512T64UH8A0FN (Green)
256MB: 32M x 64 / 512MB: 64M x 64
PC2-3200 / PC2-4200 Unbuffered DDR2 SO-DIMM
Pin Description
CK0,
CKE0, CKE1
Differential Clock Inputs
Clock Enable
Row Address Strobe
Column Address Strobe
Write Enable
,
A0-A12
A0-A9
A10/AP
BA0, BA1
ODT0, ODT1
NC
Chip Selects
Row Address Inputs
Column Address Inputs
Column Address Input/Auto-precharge
SDRAM Bank Address Inputs
Active termination control lines
No Connect
DQ0-DQ63
DQS0-DQS7
-
DM0-DM7
V
DD
V
REF
V
DDSPD
V
SS
SCL
SDA
SA0, SA1
Data input/output
Bidirectional data strobes
Differential data strobes
Input Data Masks
Power (1.8V)
Ref. Voltage for SSTL_18 inputs
Serial EEPROM positive power supply
Ground
Serial Presence Detect Clock Input
Serial Presence Detect Data input/output
Serial Presence Detect Address Inputs
Pinout
Pin
1
3
5
7
9
11
13
15
17
19
21
23
25
27
29
31
33
35
37
39
41
43
45
47
49
DQS1
V
SS
DQ10
DQ11
V
SS
V
SS
DQ16
DQ17
V
SS
DQS0
V
SS
DQ2
DQ3
V
SS
DQ8
DQ9
V
SS
Front
V
REF
V
SS
DQ0
DQ1
V
SS
Pin Back
2
4
6
8
V
SS
DQ4
DQ5
V
SS
Pin Front
51
53
55
57
59
61
63
65
67
69
71
73
75
77
79
81
83
85
87
89
91
93
95
97
99
DQS2
V
SS
DQ18
DQ19
V
SS
DQ24
DQ25
V
SS
DM3
NC
V
SS
DQ26
DQ27
V
SS
CKE0
V
DD
NC
(BA2)
V
DD
A12
A9
A8
V
DD
A5
A3
Pin
52
54
56
58
60
62
64
66
68
70
72
74
76
78
80
82
84
86
88
90
92
94
96
98
DQS3
V
SS
DQ30
DQ31
V
SS
CKE1
V
DD
(A15)
(A14)
V
DD
A11
A7
A6
V
DD
A4
Back
DM2
V
SS
DQ22
DQ23
V
SS
DQ28
DQ29
V
SS
Pin
101
103
105
107
109
111
113
115
117
119
121
123
125
127
129
131
133
135
137
139
141
143
145
147
149
DQS4
V
SS
DQ34
DQ35
V
SS
DQ40
DQ41
V
SS
DM5
V
SS
V
DD
ODT1
V
SS
DQ32
DQ33
V
SS
V
DD
Front
A1
V
DD
A10/AP
BA0
Pin
102
104
106
108
110
112
114
116
118
120
122
124
126
128
130
132
134
136
138
140
142
144
146
148
150
DQS5
V
SS
V
DD
ODT0
(A13)
V
DD
NC
V
SS
DQ36
DQ37
V
SS
DM4
V
SS
DQ38
DQ39
V
SS
DQ44
DQ45
V
SS
Back
A0
V
DD
BA1
Pin Front
151 DQ42
153 DQ43
155 V
SS
157 DQ48
159 DQ49
161 V
SS
163 NC
165 V
SS
167
169 DQS6
171 V
SS
173 DQ50
175 DQ51
177 V
SS
179 DQ56
181 DQ57
183 V
SS
185 DM7
187 V
SS
189 DQ58
191 DQ59
193 V
SS
195 SDA
197 SCL
199 V
DDSPD
Pin Back
152 DQ46
154 DQ47
156 V
SS
158 DQ52
160 DQ53
162 V
SS
164 CK1
166
168 V
SS
170 DM6
172 V
SS
174 DQ54
176 DQ55
178 V
SS
180 DQ60
182 DQ61
184 V
SS
186
188 DQS7
190 V
SS
192 DQ62
194 DQ63
196 V
SS
198 SA0
200 SA1
10 DM0
12 V
SS
14 DQ6
16 DQ7
18 V
SS
20 DQ12
22 DQ13
24 V
SS
26 DM1
28 V
SS
30 CK0
32
34 V
SS
36 DQ14
38 DQ15
40 V
SS
42 V
SS
44 DQ20
46 DQ21
48 V
SS
50 NC
100 A2
Note: All pin assignments are consistent for all 8-byte unbuffered versions.
REV 1.2
11/02/2005
2
NANYA reserves the right to change products and specifications without notice.
© NANYA TECHNOLOGY CORPORATION
NT256T64UH4A0FM / NT512T64UH8A0FM
NT256T64UH4A0FN / NT512T64UH8A0FN (Green)
256MB: 32M x 64 / 512MB: 64M x 64
PC2-3200 / PC2-4200 Unbuffered DDR2 SO-DIMM
Input/Output Functional Description
Symbol
CK0
Type
(SSTL)
(SSTL)
CKE0, CKE1
(SSTL)
Polarity
Function
The positive line of the differential pair of system clock inputs which drives the input to the
Positive
on-DIMM PLL. All the DDR2 SDRAM address and control inputs are sampled on the rising
Edge
edge of their associated clocks.
Negative The negative line of the differential pair of system clock inputs which drives the input to the
Edge on-DIMM PLL.
Active
High
Active
Low
Active
Low
Active
High
-
Activates the SDRAM CK signal when high and deactivates the CK signal when low. By
deactivating the clocks, CKE low initiates the Power Down mode, or the Self Refresh
mode.
Enables the associated SDRAM command decoder when low and disables the command
decoder when high. When the command decoder is disabled, new commands are ignored
but previous operations continue.
When sampled at the positive rising edge of the clock,
to be executed by the SDRAM.
Reference voltage for SSTL-18 inputs
On-Die Termination control signals
Selects which SDRAM bank is to be active.
During a Bank Activate command cycle, A0-A12 defines the row address (RA0-RA12)
when sampled at the rising clock edge.
During a Read or Write command cycle, A0-A9, A11 defines the column address
(CA0-CA10) when sampled at the rising clock edge. In addition to the column address, AP
is used to invoke Autoprecharge operation at the end of the Burst Read or Write cycle. If
AP is high, autoprecharge is selected and BA0/BA1 define the bank to be precharged. If
AP is low, autoprecharge is disabled.
During a Precharge command cycle, AP is used in conjunction with BA0/BA1 to control
which bank(s) to precharge. If AP is high all 4 banks will be precharged regardless of the
state of BA0/BA1. If AP is low, then BA0/BA1 are used to define which bank to pre-charge.
Data and Check Bit Input/Output pins. Check bits are only applicable on the x72 DIMM
configurations.
Power and ground for the DDR2 SDRAM input buffers and core logic
Negative
and
Data strobe for input and output data
Positive
Edge
Active
High
-
-
-
Supply
The data write masks, associated with one data byte. In Write mode, DM operates as a
byte mask by allowing input data to be written if it is low but blocks the write operation if it
is high. In Read mode, DM lines have no effect. DM8 is associated with check bits
CB0-CB7, and is not used on x64 modules.
Address inputs. Connected to either V
DD
or V
SS
on the system board to configure the
Serial Presence Detect EEPROM address.
This bi-directional pin is used to transfer data into or out of the SPD EEPROM. A resistor
must be connected from the SDA bus line to V
DD
to act as a pull-up.
This signal is used to clock data into and out of the SPD EEPROM. A resistor may be
connected from the SCL bus time to V
DD
to act as a pull-up.
Serial EEPROM positive power supply.
,
(SSTL)
,
V
REF
,
(SSTL)
Supply
Input
(SSTL)
,
,
define the operation
ODT0, ODT1
BA0, BA1
A0 - A9
A10/AP
A11, A12
(SSTL)
-
DQ0 – DQ63
CB0 – CB7
V
DD
,
V
SS
DQS0 – DQS7
–
(SSTL)
Supply
(SSTL)
Active
High
DM0 – DM7
Input
SA0 – SA2
SDA
SCL
V
DDSPD
REV 1.2
11/02/2005
3
NANYA reserves the right to change products and specifications without notice.
© NANYA TECHNOLOGY CORPORATION
NT256T64UH4A0FM / NT512T64UH8A0FM
NT256T64UH4A0FN / NT512T64UH8A0FN (Green)
256MB: 32M x 64 / 512MB: 64M x 64
PC2-3200 / PC2-4200 Unbuffered DDR2 SO-DIMM
Functional Block Diagram
(256MB
–
1 Rank, 32Mx16 DDR2 SDRAMs)
DQS0
DM0
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
DQS1
DM1
DQ8
DQ9
DQ10
DQ11
DQ12
DQ13
DQ14
DQ15
LDQS
LDM
I/O 0
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
D0
UDQS
UDM
I/O 8
I/O 9
I/O 10
I/O 11
I/O 12
I/O 13
I/O 14
I/O 15
DQS4
DM4
DQ32
DQ33
DQ34
DQ35
DQ36
DQ37
DQ38
DQ39
DQS5
DM5
DQ40
DQ41
DQ42
DQ43
DQ44
DQ45
DQ46
DQ47
LDQS
LDM
I/O 0
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
D2
UDQS
UDM
I/O 8
I/O 9
I/O 10
I/O 11
I/O 12
I/O 13
I/O 14
I/O 15
DQS2
DM2
DQ16
DQ17
DQ18
DQ19
DQ20
DQ21
DQ22
DQ23
DQS3
DM3
DQ24
DQ25
DQ26
DQ27
DQ28
DQ29
DQ30
DQ31
LDQS
LDM
I/O 0
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
UDQS
UDM
I/O 8
I/O 9
I/O 10
I/O 11
I/O 12
I/O 13
I/O 14
I/O 15
D1
DQS6
DM6
DQ48
DQ49
DQ50
DQ51
DQ52
DQ53
DQ54
DQ55
DQS7
DM7
DQ56
DQ57
DQ58
DQ59
DQ60
DQ61
DQ62
DQ63
LDQS
LDM
I/O 0
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
D3
UDQS
UDM
I/O 8
I/O 9
I/O 10
I/O 11
I/O 12
I/O 13
I/O 14
I/O 15
BA0-BA1
A0-A12
BA0-BA1 : SDRAMs D0-D3
A0-A12 : SDRAMs D0-D3
: SDRAMs D0-D3
: SDRAMs D0-D3
V
DDSPD
V
DD
/V
DDQ
V
REF
V
SS
V
DDID
SPD
D0-D3
D0-D3
D0-D3
CK0
2 loads
CK1
CKE0
CKE1
CKE : SDRAMs D0-D3
N.C.
: SDRAMs D0-D3
SCL
WP
A0
SA0
Serial PD
A1
SA1
A2
SA2
SDA
2 loads
Notes :
1.
2.
3.
4.
DQ wiring may differ from that described in this drawing .
DQ/DQS/DM/CKE/S relationships are maintained as shown.
DQ/DQS/DM/DQS resistors are 22+/- 5% Ohms.
V
DDID
strap connections (for memory device V
DD
, V
DDQ
):
STRAP OUT (OPEN): V
DD
= V
DDQ
STRAP IN (V
SS
): V
DD
is not equal to V
DDQ
.
REV 1.2
11/02/2005
4
NANYA reserves the right to change products and specifications without notice.
© NANYA TECHNOLOGY CORPORATION
NT256T64UH4A0FM / NT512T64UH8A0FM
NT256T64UH4A0FN / NT512T64UH8A0FN (Green)
256MB: 32M x 64 / 512MB: 64M x 64
PC2-3200 / PC2-4200 Unbuffered DDR2 SO-DIMM
Functional Block Diagram
(512MB
–
2 Ranks, 32Mx16 DDR2 SDRAMs)
DQS0
DM0
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
DQS1
DM1
DQ8
DQ9
DQ10
DQ11
DQ12
DQ13
DQ14
DQ15
LDQS
LDM
I/O 0
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
D0
UDQS
UDM
I/O 8
I/O 9
I/O 10
I/O 11
I/O 12
I/O 13
I/O 14
I/O 15
LDQS
LDM
I/O 0
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
D4
UDQS
UDM
I/O 8
I/O 9
I/O 10
I/O 11
I/O 12
I/O 13
I/O 14
I/O 15
DQS4
DM4
DQ32
DQ33
DQ34
DQ35
DQ36
DQ37
DQ38
DQ39
DQS5
DM5
DQ40
DQ41
DQ42
DQ43
DQ44
DQ45
DQ46
DQ47
LDQS
LDM
I/O 0
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
D2
UDQS
UDM
I/O 8
I/O 9
I/O 10
I/O 11
I/O 12
I/O 13
I/O 14
I/O 15
LDQS
LDM
I/O 0
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
D6
UDQS
UDM
I/O 8
I/O 9
I/O 10
I/O 11
I/O 12
I/O 13
I/O 14
I/O 15
DQS2
DM2
DQ16
DQ17
DQ18
DQ19
DQ20
DQ21
DQ22
DQ23
DQS3
DM3
DQ24
DQ25
DQ26
DQ27
DQ28
DQ29
DQ30
DQ31
LDQS
LDM
I/O 0
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
D1
UDQS
UDM
I/O 8
I/O 9
I/O 10
I/O 11
I/O 12
I/O 13
I/O 14
I/O 15
LDQS
LDM
I/O 0
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
D5
UDQS
UDM
I/O 8
I/O 9
I/O 10
I/O 11
I/O 12
I/O 13
I/O 14
I/O 15
DQS6
DM6
DQ48
DQ49
DQ50
DQ51
DQ52
DQ53
DQ54
DQ55
DQS7
DM7
DQ56
DQ57
DQ58
DQ59
DQ60
DQ61
DQ62
DQ63
LDQS
LDM
I/O 0
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
D3
UDQS
UDM
I/O 8
I/O 9
I/O 10
I/O 11
I/O 12
I/O 13
I/O 14
I/O 15
LDQS
LDM
I/O 0
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
D7
UDQS
UDM
I/O 8
I/O 9
I/O 10
I/O 11
I/O 12
I/O 13
I/O 14
I/O 15
BA0-BA1
A0-A12
BA0-BA1 : SDRAMs D0-D3
A0-A12 : SDRAMs D0-D3
: SDRAMs D0-D3
: SDRAMs D0-D3
V
DDSPD
V
DD
/V
DDQ
V
REF
V
SS
V
DDID
SPD
D0-D3
D0-D3
D0-D3
CK0
2 loads
CKE0
CKE1
CKE : SDRAMs D0-D3
N.C.
: SDRAMs D0-D3
CK1
2 loads
ODT0
ODT1
ODT : SDRAMs D0-D3
ODT : SDRAMs D4-D7
Notes :
1.
2.
3.
4.
Serial PD
DQ wiring may differ from that described in this drawing.
DQ/DQS/DM/CKE/S relationships are maintained as shown.
DQ/DQS/DM/DQS resistors are 22+/- 5% Ohms.
V
DDID
strap connections (for memory device V
DD
, V
DDQ
):
STRAP OUT (OPEN): V
DD
= V
DDQ
STRAP IN (V
SS
): V
DD
is not equal to V
DDQ
.
SCL
WP
A0
SA0
A1
SA1
A2
SDA
REV 1.2
11/02/2005
5
NANYA reserves the right to change products and specifications without notice.
© NANYA TECHNOLOGY CORPORATION
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