EMD22 datasheet, PDF - EEWORLD Datasheet

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EMD22: DescriptionSmall Signal Bipolar Transistor; CategoryDiscrete semiconductor The transistor; File Size246KB，2 Pages; ManufacturerJCET; Websitehttp://www.cj-elec.com/; Jiangsu Changdian Technology Co., Ltd. focuses on semiconductor packaging and testing business, providing customers at home and abroad with a full range of solutions such as chip testing, packaging design, packaging testing, etc. The company was successfully listed on the Shanghai Main Board in 2003, becoming the first semiconductor packaging and testing listed company in China. It now has a national enterprise technology center and a postdoctoral research workstation. It is a national key high-tech enterprise, a supporting unit of the National Engineering Laboratory for High-density Integrated Circuits, and the chairman unit of the Integrated Circuit Packaging Technology Innovation Strategic Alliance.

Discrete devices: diodes (switching diodes, Schottky diodes (Schottky rectifiers), voltage regulator diodes, Pin diodes, TVS diodes, rectifier diodes, fast recovery diodes); transistors (Darlington tubes, digital transistors, MOSFETs); thyristors: silicon-controlled rectifiers, triacs; composite tubes: transistors + field-effect tubes, dual transistors, dual digital transistors, digital transistors + transistors, transistors + diodes, field-effect tubes + diodes, dual field-effect tubes. Voltage regulator circuit; energy-saving lamp charger switch tube

Lead frame: TO series (TO); SOD series (SOD); SOT series (TSOT, SOT); FBP series (WBFBP); QFN series (QFNWB, DFNWB, DFNFC, QFNFC); QFP series (LQFP: PQFP: PLCC: TQFP); SIP series (SIP, HSIP, FSIP); SOP series (SOP, HSOP, SSOP, MSOP, HTSOP, TSSOP); DIP series (DIP, FDIP, SDIP); PDFN series; PQFN series; MIS series (MISFC, MISWB)

Nine core technologies: Through Silicon Via (TSV) packaging technology; SiP RF packaging technology; wafer-level 3D rewiring packaging process technology; copper bump interconnection technology; high-density FC-BGA packaging and testing technology (Flip Chip BGA); multi-turn array four-sided pinless packaging and testing technology; package body 3D stacking technology; 50μm or less ultra-thin chip 3D stacking packaging technology; MEMS multi-chip packaging technology; MIS packaging technology (pre-encapsulated interconnection system); BGA packaging technology, etc.

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EMD22 Overview

Small Signal Bipolar Transistor

EMD22 Parametric

Parameter Name	Attribute value
Maker	JCET
package instruction	SMALL OUTLINE, R-PDSO-F6
Reach Compliance Code	unknown
Other features	BUILT IN BIAS RESISTANCE RATIO IS 10
Maximum collector current (IC)	0.1 A
Collector-emitter maximum voltage	50 V
Configuration	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)	80
JESD-30 code	R-PDSO-F6
Number of components	2
Number of terminals	6
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	NPN AND PNP
surface mount	YES
Terminal form	FLAT
Terminal location	DUAL
Transistor component materials	SILICON
Nominal transition frequency (fT)	250 MHz

EMD22 Preview

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

SOT-563 Plastic-Encapsulate Transistors

EMD22

General purpose transistors (dual transistors)

SOT-563

FEATURES

Both the DTA143Z chip and DTC143Z chip in a package.

Mounting possible with SOT-563 automatic mounting machines.

Transistor elements are independent, eliminating interference.

Mounting cost and area be cut in half.

Marking: D22

Equivalent circuit

DTr1 Absolute maximum ratings(T

=25℃ unless otherwise specified)

Symbol

C(MAX)

STG

Power Dissipation

Junction Temperature

Storage Temperature

Parameter

Supply Voltage

Input Voltage

Output Current

Value

-5~+30

100

150

-55~+150

Unit

℃

ELECTRICAL CHARACTERISTICS (T

=25℃ unless otherwise specified)

Parameter

Symbol

I(off)

Input voltage

I(on)

Output voltage

Input current

Output current

DC current gain

Input resistance

Resistance ratio

Transition frequency

O(on)

O(off)

/ R

=10V, I

=5mA, f=100MHz

=0.3V, I

=5mA

=5mA, I

=0.25mA

=5V

=50V, V

=5V, I

=10mA

3.29

250

6.11

MHz

KΩ

1.3

0.3

1.8

0.5

μA

Test

conditions

Min

0.5

Typ

Max

Unit

=5V, I

=100μA

A,Dec,2010

DTr2 Absolute maximum ratings(T

=25℃ unless otherwise specified)

Symbol

C(MAX)

STG

Supply Voltage

Input Voltage

Output Current

Power Dissipation

Junction Temperature

Storage Temperature

Parameter

Value

-50

-30~+5

-100

150

-55~+150

Unit

℃

Electrical characteristics (T

=25℃ unless otherwise specified)

Parameter

Symbol

I(off)

Input voltage

I(on)

Output voltage

Input current

Output current

DC current gain

Input resistance

Resistance ratio

Transition frequency

O(on)

O(off)

/ R

=-10V, I

=-5mA, f=100MHz

=-0.3V, I

=-5mA

=-5mA, I

=-0.25mA

=-5V

=-50V, V

=-5V, I

=-10mA

3.29

250

6.11

MHz

KΩ

-1.3

-0.3

-1.8

-0.5

μA

Test

conditions

Min

-0.5

Typ

Max

Unit

=-5V, I

=-100μA

A,Dec,2010

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