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MBR850CT_10001

Description
Rectifier Diode
CategoryDiscrete semiconductor    diode   
File Size96KB,4 Pages
ManufacturerPANJIT
Websitehttp://www.panjit.com.tw/

PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values ​​include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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MBR850CT_10001 Overview

Rectifier Diode

MBR850CT_10001 Parametric

Parameter NameAttribute value
MakerPANJIT
Reach Compliance Codecompliant
Diode typeRECTIFIER DIODE

MBR850CT_10001 Preview

Download Datasheet
MBR840CT~MBR8200CT
SCHOTTKY BARRIER RECTIFIER
VOLTAGE
FEATURES
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-O utilizing
Flame Retardant Epoxy Molding Compound.
• Exceeds environmental standards of MIL-S-19500/228
• Low power loss, high efficiency.
• Low forward voltage, high current capability
• High surge capacity.
• For use in low voltage, high frequency inverters
free wheeling, and polarlity protection applications.
• Lead free in comply with EU RoHS 2002/95/EC directives
40 to 200 Volts
CURRENT
8 Ampere
MECHANICAL DATA
• Case: TO-220AB molded plastic package
• Terminals: Lead solderable per MIL-STD-750, Method 2026
• Polarity: As marked.
• Mounting Position: Any
• Weight: 0.0655 ounces, 1.859 grams.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified. Resistive or inductive load.
PA RA ME TE R
Ma xi mum Re curre nt P e a k Re ve rse Vo lta ge
Ma xi mum RMS Vo lta g e
Ma xi mum D C B locki ng Vo lta g e
Ma xi mum A ve ra ge F orward (S e e F i g ure 1 )
P ea k Fo rwa rd S urg e C urre nt : 8 .3 ms si ngle ha lf si ne -wave
sup eri mp o se d on rated loa d (JE D E C me tho d)
Ma xi mum Fo rward Vo lta ge a t 4 A
Ma xi mum D C Reve rse C urrent at Ra te d D C B lo cki ng
Vo lta ge
Typ i ca l The rma l Re si stance
Op e ra ti ng Juncti o n a nd S to ra g e Te mp e ra ture Rang e
T
J
=25
O
C
T
J
=10 0
O
C
S YMB OL
V
RRM
V
RMS
V
DC
I
F (AV )
I
F S M
V
F
I
R
R
θJ
C
T
J
,T
S TG
MB R8 4 0C T MB R8 45 C T MB R8 5 0 CT MB R86 0 C T MBR8 8 0 CT MB R89 0 C T MB R8 10 0 C T MB R81 5 0 CT MB R8 20 0 C T
UNITS
V
V
V
A
A
40
28
40
45
31.5
45
50
35
50
60
42
60
80
56
80
8
150
90
63
90
100
70
100
150
105
150
200
14 0
200
0 .7
0 .75
0.0 5
20
3
0.8
0.9
V
mA
O
C / W
O
-55 to +1 5 0
-6 5 to +1 7 5
C
NOTES : Both Bonding and Chip structure are available.
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