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BZD27C12P-AU

Description
VOLTAGE REGULATOR DIODES
File Size145KB,5 Pages
ManufacturerPANJIT
Websitehttp://www.panjit.com.tw/

PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values ​​include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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VOLTAGE REGULATOR DIODES

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BZD27C12P-AU
VOLTAGE REGULATOR DIODES
VOLTAGE
FEATURES
0.075(1.90)
0.067(1.70)
12 Volts
POWER
800 mW
Sillicon Planar Zener Diode
Low profile surface-mount package
Zener and surge current specification
Low leakage current
Excellent stability
High temperature soldering : 260 C/10 sec. at terminals
O
0.115(2.90)
0.106(2.70)
Lead free in comply with EU RoHS 2011/65/EU directives
Green molding compound as per IEC61249 Std. . (Halogen Free)
• Acqire quality system certificate : TS16949
• AEC-Q101 qualified
0.145(3.70)
0.137(3.50)
MECHANICAL DATA
Case: SOD-123FL
Terminals : Solderable per MIL-STD-750,Method 2026
Approx Weight: 0.0168 grams
0.030(0.75)
0.017(0.45)
1
Cathode
2
Anode
ABSOLUTE MAXIMUM RATINGS
(TA=25
O
C , unless otherwise specified)
Parameter
Power dissipation
Non-repetitive peak pulse
power dissipation
Test conditon
T
L
=80
O
C
T
A
=25
O
C
100
s
square pulse(note 2)
10/1000
s
waveform (BZD27C12P-AU)
Symbol
P
TOT
P
TOT
P
ZSM
P
RSM
Value
2.3
0.8 (note 1)
300
150
Units
W
0.008(0.20)
0.004(0.10)
0.044(1.10)
0.031(0.80)
0.043(1.08)
0.038(0.98)
W
THERMAL CHARACTERISTICS
(TA=25
O
C , unless otherwise noted)
P a ra me te r
The r m a l r e s i s t a nc e j unc t i o n t o a m b i e nt a i r
The r m a l r e s i s t a nc e j unc t i o n t o l e a d
M a xi m um j unc t i o n t e m p e r a t ur e
S t o r a g e t e m p e r a t ur e r a ng e
Te s t c o n d i t i o n
S ym b o l
R
θ
J A
R
θ
J L
Τ
J
T
s
Va l ue
180
30
150
-5 5 to + 1 5 0
U ni t
K /W
K /W
O
C
C
O
ELCTRICAL CHARACTERISTICS
PA RA M E TE R
F o r w a r d vo l t a g e
Te s t c o n d i t i o n
I
F
= 0 . 2 A
S ym b o l
V
F
Mi n
Ty p
Max
1.2
U ni t s
V
NOTES:
1. Mounted on epoxy-glass PCB with 3X3 mm Cu pa ds (>40m thick)
2. T
J
=25
O
C prior to surge
STAD-JAN.12.2007
PAGE . 1
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