UT62W1024LCL-55LL datasheet, PDF

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UT62W1024LCL-55LL: DescriptionStandard SRAM, 128KX8, 55ns, CMOS, PDSO32; Categorystorage storage; File Size125KB，15 Pages; ManufacturerUTRON; Websitehttp://www.utron.net/; Utron Technologies Corp. was established in 1983, specializing in the design and manufacture of bare board and cable testers. We are a well-known manufacturer and exporter of PCB and cable testers for over 14 years.

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UT62W1024LCL-55LL Overview

Standard SRAM, 128KX8, 55ns, CMOS, PDSO32

UT62W1024LCL-55LL Parametric

Parameter Name	Attribute value
Maker	UTRON
package instruction	TSSOP, TSSOP32,.8,20
Reach Compliance Code	unknown
Maximum access time	55 ns
I/O type	COMMON
JESD-30 code	R-PDSO-G32
memory density	1048576 bit
Memory IC Type	STANDARD SRAM
memory width	8
Number of terminals	32
word count	131072 words
character code	128000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	128KX8
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	TSSOP
Encapsulate equivalent code	TSSOP32,.8,20
Package shape	RECTANGULAR
Package form	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
Parallel/Serial	PARALLEL
power supply	3/3.3 V
Certification status	Not Qualified
Maximum standby current	0.00002 A
Minimum standby current	2 V
Maximum slew rate	0.05 mA
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal form	GULL WING
Terminal pitch	0.5 mm
Terminal location	DUAL

UT62W1024LCL-55LL Preview



UTRON

Rev. 1.1

REVISION HISTORY

REVISION

DESCRIPTION

REV. 0.9

Original.

REV. 1.0 1. The symbols CE1# ,OE# & WE# are revised as CE , OE &

2. I

cc1

is revise as I

3. I

cc2

is revise as I

cc1

REV. 1.1 Add order information for lead free product

UT62W1024

128K X 8 BIT WIDE RANGE LOW POWER CMOS SRAM

DATE

Mar.15. 2001

Jul. 06. 2001

May. 16. 2003

UTRON TECHNOLOGY INC.

1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C.

TEL: 886-3-5777882 FAX: 886-3-5777919

P80056



UTRON

Rev. 1.1

UT62W1024

128K X 8 BIT WIDE RANGE LOW POWER CMOS SRAM

GENERAL DESCRIPTION

The UT62W1024 is a 1,048,576-bit low power

CMOS static random access memory organized as

131,072 words by 8 bits. It is fabricated using high

performance, high reliability CMOS technology.

The UT62W1024 is designed for low power

application. It is particularly well suited for battery

back-up nonvolatile memory application.

The UT62W1024 operates from a wide range of

2.7V~ 5.5V power supply and all inputs and outputs

are fully TTL compatible.

FEATURES

Access time : 35/55/70ns (max.)

Low power consumption :

Operating : 60/50/40 mA (typical)

Standby : 10µA (typical) L-version

1µA (typical) LL-version

Wide range power supply : 2.7V to 5.5V

All inputs and outputs TTL compatible

Fully static operation

Three state outputs

Data retention voltage : 2V (min.)

Package : 32-pin 600 mil PDIP

32-pin 450 mil SOP

32-pin 8x20mm TSOP-1

32-pin 8x13.4mm STSOP

PIN CONFIGURATION

A16

A14

Vcc

A15

CE2

FUNCTIONAL BLOCK DIAGRAM

1024 X 1024

MEMORY

ARRAY

A12

A0-A16

DECODER

A13

A11

UT62W1024

Vcc

Vss

A10

I/O8

I/O7

I/O6

I/O5

I/O4

I/O1-I/O8

I/O DATA

CIRCUIT

COLUMN I/O

I/O1

I/O2

I/O3

Vss

PDIP / SOP

CE2

CONTROL

CIRCUIT

A11

A13

A10

I/O8

I/O7

I/O6

I/O5

I/O4

Vss

I/O3

I/O2

I/O1

PIN DESCRIPTION

SYMBOL

A0 - A16

I/O1 - I/O8

CE ,CE2

DESCRIPTION

Address Inputs

Data Inputs/Outputs

Chip enable 1,2 Inputs

Write Enable Input

Output Enable Input

Power Supply

Ground

No Connection

CE2

A15

Vcc

A16

A14

A12

UT62W1024

TSOP-I/STSOP

UTRON TECHNOLOGY INC.

1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C.

TEL: 886-3-5777882 FAX: 886-3-5777919

P80056



UTRON

Rev. 1.1

UT62W1024

128K X 8 BIT WIDE RANGE LOW POWER CMOS SRAM

ABSOLUTE MAXIMUM RATINGS*

PARAMETER

Terminal Voltage with Respect to Vss

Operating Temperature

Storage Temperature

Power Dissipation

DC Output Current

Soldering Temperature (under 10 sec)

SYMBOL

TERM

STG

OUT

solder

RATING

-0.5 to +4.6

0 to +70

-65 to +150

260

UNIT

℃

*Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress

rating only and functional operation of the device or any other conditions above those indicated in the operational sections of this

specification is not implied. Exposure to the absolute maximum rating conditions for extended period may affect device reliability.

TRUTH TABLE

MODE

Standby

Output Disable

Read

Write

CE2

I/O OPERATION

High - Z

High -Z

High - Z

OUT

SUPPLY CURRENT

SB1

Note: H = V

, L=V

, X = Don't care.

DC ELECTRICAL CHARACTERISTICS (

Ⅰ

)

= 2.7V~3.6V, Vss=0V, T

= 0

℃

to 70

℃

)

PARAMETER

SYMBOL TEST CONDITION

Input High Voltage

Input Low Voltage

Input Leakage Current

≦

Output Leakage Current I

≦

I/O

≦

CE =V

or CE2=V

Output High Voltage

Output Low Voltage

Average Operating

Power Supply Courrent

= -1mA

= 4mA

Cycle time =Min. 100% Duty,

CE =V

, CE2 = V

I/O

= 0mA

Cycle time = 1µs, 100% Duty,

≦

0.2V,CE2

≧

-0.2V,

=50PF

CE =V

or CE2 = V

≧

-0.2V or

CE2

≦

0.2V

-L

MIN.

2.0

- 0.5

-1

2.2

TYP.

MAX.

+0.5

0.6

2.5

0.5

0.4

1.0

100

UNIT

µA

-35

-55

-70

CC1

Standby Power

Supply Current

SB1

Notes:

1. Overshoot : Vcc+2.0v for pulse width less than 10ns.

2. Undershoot : Vss-2.0v for pulse width less than 10ns.

3. Overshoot and Undershoot are sampled, not 100% tested.

4. Those parameters are for reference only under 50

UTRON TECHNOLOGY INC.

1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C.

TEL: 886-3-5777882 FAX: 886-3-5777919

P80056



UTRON

Rev. 1.1

UT62W1024

128K X 8 BIT WIDE RANGE LOW POWER CMOS SRAM

DC ELECTRICAL CHARACTERISTICS (

Ⅱ

)

= 4.5V~5.5V, Vss=0V, TA = 0

℃

to 70

℃

)

PARAMETER

SYMBOL TEST CONDITION

Input High Voltage

Input Low Voltage

Input Leakage Current

≦

Output Leakage Current I

≦

I/O

≦

CE =V

or CE2=V

Output High Voltage

Output Low Voltage

Average Operating

Power Supply Courrent

=-1mA

= 4mA

Cycle time =Min. 100% Duty,

CE =V

, CE2 = V

=100PF

Cycle time = 1µs, 100% Duty,

≦

0.2V,CE2

≧

-0.2V,

I/O

= 0mA

CE =V

or CE2 = V

≧

-0.2V or

CE2

≦

0.2V

-L

MIN.

2.2

- 0.5

-1

2.4

TYP.

-40

2.5

0.5

MAX.

+0.5

0.8

0.4

100

1.0

100

UNIT

µA

-35

-55

-70

CC1

Standby Power

Supply Current

SB1

*1. V

(max)=Vcc+3.0v for pulse width less than 10ns.

*2. V

(min)=Vss-3.0v for pulse width less than 10ns.

*3. Those parameters are for reference only under 50℃

UTRON TECHNOLOGY INC.

1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C.

TEL: 886-3-5777882 FAX: 886-3-5777919

P80056



UTRON

Rev. 1.1

UT62W1024

128K X 8 BIT WIDE RANGE LOW POWER CMOS SRAM

CAPACITANCE

=25

℃

, f=1.0MHz)

PARAMETER

Input Capacitance

Input/Output Capacitance

SYMBOL

I/O

MIN.

MAX.

UNIT

Note : These parameters are guaranteed by device characterization, but not production tested.

AC TEST CONDITIONS

Input Pulse Levels

Input Rise and Fall Times

Input and Output Timing Reference Levels

Output Load

0V to 3.0V

5ns

1.5V

=100pF, I

=-1mA/4mA(V

=5V)

=50pF, I

=-1mA/2mA(V

=3.3V)

AC ELECTRICAL CHARACTERISTICS

= 2.7V~5.5V, V

=0V , T

= 0

℃

to 70

℃

)

(1) READ CYCLE

PARAMETER

SYMBOL

UT62W1024-35 UT62W1024-55 UT62W1024-70

MIN. MAX. MIN. MAX. MIN. MAX.

Read Cycle Time

Address Access Time

Chip Enable Access Time

ACE

Output Enable Access Time

Chip Enable to Output in Low-Z

CLZ

Output Enable to Output in Low-Z t

OLZ

Chip Disable to Output in High-Z

CHZ

Output Disable to Output in High-Z t

OHZ

Output Hold from Address Change t

UNIT

(2) WRITE CYCLE

PARAMETER

Write Cycle Time

Address Valid to End of Write

Chip Enable to End of Write

Address Set-up Time

Write Pulse Width

Write Recovery Time

Data to Write Time Overlap

Data Hold from End of Write-Time

Output Active from End of Write

Write to Output in High-Z

SYMBOL

UT62W1024-35 UT62W1024-55

MIN.

MAX. MIN. MAX.

WHZ

UT62W1024-70

UNIT

MIN.

MAX.

*These parameters are guaranteed by device characterization, but not production tested.

UTRON TECHNOLOGY INC.

1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C.

TEL: 886-3-5777882 FAX: 886-3-5777919

P80056

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