BLA6H1011-600 datasheet, PDF - EEWORLD Datasheet

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BLA6H1011-600: DescriptionRF Power Field-Effect Transistor, 2-Element, L Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT, CERAMIC PACKAGE-4; CategoryDiscrete semiconductor The transistor; File Size907KB，13 Pages; ManufacturerAmpleon; Websitehttp://www.ampleon.com/; Ampleon was founded in 2015, but has been leading the industry in RF power for more than 50 years. Looking to the future, the company hopes to make the world a better place by innovating with advanced LDMOS and GaN technologies in high-frequency applications. With more than 1,600 employees worldwide, Ampleon is committed to enabling its customers to successfully use its RF power products through close collaboration and partnerships, innovative capabilities and excellent execution. Its consistent and innovative product portfolio brings best-in-class products and solutions for 4G LTE and 5G NR infrastructure, industrial, scientific, medical, broadcast, aerospace and defense applications.

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BLA6H1011-600 Overview

RF Power Field-Effect Transistor, 2-Element, L Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT, CERAMIC PACKAGE-4

BLA6H1011-600 Parametric

Parameter Name	Attribute value
Maker	Ampleon
package instruction	FLANGE MOUNT, R-CDFM-F4
Reach Compliance Code	unknown
ECCN code	EAR99
Shell connection	SOURCE
Configuration	COMMON SOURCE, 2 ELEMENTS
Minimum drain-source breakdown voltage	100 V
Maximum drain current (ID)	72 A
FET technology	METAL-OXIDE SEMICONDUCTOR
highest frequency band	L BAND
JESD-30 code	R-CDFM-F4
Humidity sensitivity level	1
Number of components	2
Number of terminals	4
Operating mode	ENHANCEMENT MODE
Package body material	CERAMIC, METAL-SEALED COFIRED
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Certification status	Not Qualified
surface mount	YES
Terminal form	FLAT
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	AMPLIFIER
Transistor component materials	SILICON

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BLA6H1011-600

LDMOS avionics power transistor

Rev. 02 — 1 September 2015

Product data sheet

1. Product profile

1.1 General description

600 W LDMOS pulsed power transistor intended for TCAS and IFF applications in the

1030 MHz to 1090 MHz range.

Table 1.

Test information

Typical RF performance at T

case

= 25



C; t

= 50





= 2 %; I

= 100 mA; in a class-AB production

test circuit.

Mode of operation

pulsed RF

CAUTION

This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken

during transport and handling.

(MHz)

1030 to 1090

(V)

(W)

600

(dB)



(%)

(ns)

1.2 Features and benefits



Typical pulsed RF performance at a frequency of 1030 MHz to 1090 MHz, a supply

voltage of 48 V, an I

of 100 mA, a t

of 50

s

with



of 2 %:



Output power = 600 W



Power gain = 17 dB



Efficiency = 52 %



Easy power control



Integrated ESD protection



High flexibility with respect to pulse formats



Excellent ruggedness



High efficiency



Excellent thermal stability



Designed for broadband operation (1030 MHz to 1090 MHz)



Internally matched for ease of use



Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances

(RoHS)

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