1N4006G datasheet, PDF - EEWORLD Datasheet

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1N4006G: DescriptionRectifier Diode, 1 Element, 1A, 800V V(RRM); CategoryDiscrete semiconductor diode; File Size171KB，2 Pages; ManufacturerGood-Ark; Suzhou Gotech is a complete and comprehensive manufacturer of design, manufacturing, packaging and sales in the domestic semiconductor discrete device diode industry. From the independent development of front-end chips to various packaging technologies of back-end finished products, it has formed a complete industrial chain. The main products include leadless integrated circuit products and discrete device products with the latest packaging technology, automotive rectifier diodes, power modules, rectifier diode chips, silicon rectifier diodes, switching diodes, Zener diodes, micro bridge piles, military fuses, photovoltaic bypass modules, etc., with a total of more than 50 series and more than 1,500 varieties. The products are widely used in many fields such as aerospace, automobiles, green lighting, IT, household appliances and power supply devices for large equipment. Design and develop silver paste for solar cells and various electronic pastes, and develop and mass produce various new sensors in the field of the Internet of Things.

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1N4006G Overview

Rectifier Diode, 1 Element, 1A, 800V V(RRM)

1N4006G Parametric

Parameter Name	Attribute value
Maker	Good-Ark
package instruction	DO-41, 2 PIN
Reach Compliance Code	compliant
Shell connection	ISOLATED
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	1.1 V
JEDEC-95 code	DO-204AL
JESD-30 code	O-PALF-W2
Maximum non-repetitive peak forward current	30 A
Number of components	1
Phase	1
Number of terminals	2
Maximum operating temperature	150 °C
Minimum operating temperature	-55 °C
Maximum output current	1 A
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	LONG FORM
Maximum repetitive peak reverse voltage	800 V
Maximum reverse current	5 µA
Maximum reverse recovery time	1 µs
Reverse test voltage	800 V
surface mount	NO
Terminal form	WIRE
Terminal location	AXIAL

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1N4001G THRU 1N4007G, BY133G

GLASS PASSIVATED JUNCTION RECTIFIER

Reverse Voltage -

50 to 1300 Volts

Forward Current -

1.0 Ampere

Features

Plastic package has Underwriters Laboratory Flammability

Classification 94V-0

High temperature metallurgically bonded construction

Glass passivated cavity-free junction

Capable of meeting environmental standards of

MIL-S-19500

1.0 ampere operation at T

=75 with no thermal runaway

Typical I

less than 0.1 A

High temperature soldering guaranteed:

350 /10 seconds, 0.375 (9.5mm) lead length,

5 lbs. (2.3Kg) tension

Mechanical Data

Case:

DO-41 molded plastic over glass body

Terminals:

Plated axial leads, solderable per

MIL-STD-750, method 2026

Polarity:

Color band denotes cathode end

Mounting Position:

Any

Weight:

0.012 ounce, 0.335 gram

DIM ENSIONS

DIM

inches

Min.

0.165

0.079

0.028

1.000

Max.

0.205

0.106

0.034

Min.

4.2

2.0

0.71

25.40

Max.

5.2

2.7

0.86

Note

Maximum Ratings and Electrical Characteristics

Ratings at 25

ambient temperature unless otherwise specified.

Symbols

4001G

4002G

4003G

4004G

4005G

4006G

4007G

133G

Units

Maximum repetitive peak reverse voltage

Maximum RMS voltage

Maximum DC blocking voltage

Maximum average forward rectified current

0.375" (9.5mm) lead length at T

=75

Peak forward surge current

8.3mS single half sine-wave superimposed

on rated load (MIL-STD-750D 4066 method)

Maximum instantaneous forward voltage at 1.0A

Maximum DC reverse current

at rated DC blocking voltage

=25

=125

RRM

RMS

(AV)

FSM

100

200

140

200

400

280

400

1.0

30.0

1.1

5.0

50.0

2.0

8.0

55.0

25.0

600

420

600

800

560

800

1000

700

1000

1300

910

1300

Volts

Amp

Amps

Volts

Typical reverse recovery time (Note 1)

Typical junction capacitance (Note 2)

Typical thermal resistance (Note 3)

Operating junction and storage temperature range

, T

STG

-65 to +175

Notes:

(1) Reverse recovery test conditions: I

=0.5A, I

=1.0A, I

=0.25A

(2) Measured at 1.0MHz and applied reverse voltage of 4.0 volts

(3) Thermal resistance from junction to ambient at 0.375 (9.5mm) lead length, P.C.B. mounted

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