BR102 datasheet, PDF - EEWORLD Datasheet

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BR102: DescriptionBridge Rectifier Diode, 10A, 200V V(RRM),; CategoryDiscrete semiconductor diode; File Size48KB，2 Pages; ManufacturerGood-Ark; Environmental Compliance; Suzhou Gotech is a complete and comprehensive manufacturer of design, manufacturing, packaging and sales in the domestic semiconductor discrete device diode industry. From the independent development of front-end chips to various packaging technologies of back-end finished products, it has formed a complete industrial chain. The main products include leadless integrated circuit products and discrete device products with the latest packaging technology, automotive rectifier diodes, power modules, rectifier diode chips, silicon rectifier diodes, switching diodes, Zener diodes, micro bridge piles, military fuses, photovoltaic bypass modules, etc., with a total of more than 50 series and more than 1,500 varieties. The products are widely used in many fields such as aerospace, automobiles, green lighting, IT, household appliances and power supply devices for large equipment. Design and develop silver paste for solar cells and various electronic pastes, and develop and mass produce various new sensors in the field of the Internet of Things.

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BR102 Overview

Bridge Rectifier Diode, 10A, 200V V(RRM),

BR102 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Good-Ark
package instruction	S-PUFM-W4
Reach Compliance Code	compliant
ECCN code	EAR99
Minimum breakdown voltage	200 V
Configuration	BRIDGE, 4 ELEMENTS
Diode component materials	SILICON
Diode type	BRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)	1.1 V
JESD-30 code	S-PUFM-W4
Maximum non-repetitive peak forward current	200 A
Number of components	4
Phase	1
Number of terminals	4
Maximum operating temperature	125 °C
Minimum operating temperature	-55 °C
Maximum output current	6 A
Package body material	PLASTIC/EPOXY
Package shape	SQUARE
Package form	FLANGE MOUNT
Maximum repetitive peak reverse voltage	200 V
surface mount	NO
Terminal form	WIRE
Terminal location	UPPER

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BR1005 THRU BR1010

SINGLE-PHASE SILICON BRIDGE

Reverse Voltage -

50 to 1000 Volts

Forward Current -

10.0 Amperes

Features

Surge overload rating - 200 amperes peak

Low forward voltage drop

Small size; simple installation

Silver plated copper leads

Mounting position: Any

Ceramic case

DIM ENSIONS

DIM

inches

Min.

0.580

0.230

0.405

0.750

0.038

Max.

0.620

0.270

0.445

0.042

Min.

14.69

5.84

10.29

19.1

0.97

Max.

15.71

6.86

11.31

1.07

Note

HOLE FOR NO. 6 SCREW

Maximum Ratings and Electrical Characteristics

Ratings at 25 ambient temperature unless otherwise specified.

For capacitive load, derate current by 20%.

Symbols

1005

101

102

104

106

108

1010

Units

Maximum repetitive peak reverse voltage

Maximum RMS bridge input voltage

Maximum average forward

rectified output current at

=50

=100

=50

RRM

RMS

(AV)

FSM

=25

=100

STG

100

200

140

400

280

10.0

6.0

200.0

1.1

10.0

1.0

-55 to +125

-55 to +150

600

420

800

560

1000

700

Volts

Amps

Volts

Peak forward surge current, 8.3mS single

half sine-wave superimposed on rated load

Maximum forward Voltage drop per

element at 5.0A peak

Maximum DC reverse current at rated

DC blocking voltage per element

Operating temperature range

Storage temperature range

Notes:

* Unit mounted on metal chassis

** Unit mounted on P.C. board

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