BC856A datasheet, PDF - EEWORLD Datasheet

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BC856A: Description100 mA, 65 V, PNP, Si, SMALL SIGNAL TRANSISTOR; Categorysemiconductor Discrete semiconductor; File Size331KB，2 Pages; ManufacturerNanjing International Group Co.,Ltd

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BC856A Overview

100 mA, 65 V, PNP, Si, SMALL SIGNAL TRANSISTOR

100 mA, 65 V, PNP, 硅, 小信号晶体管

BC856A Parametric

Parameter Name	Attribute value
Number of terminals	3
Transistor polarity	PNP
Maximum collector current	0.1000 A
Maximum Collector-Emitter Voltage	65 V
Processing package description	SOT-23, 3 PIN
state	ACTIVE
packaging shape	RECTANGULAR
Package Size	SMALL OUTLINE
surface mount	Yes
Terminal form	GULL WING
Terminal location	DUAL
Packaging Materials	PLASTIC/EPOXY
structure	SINGLE
Number of components	1
transistor applications	SWITCHING
Transistor component materials	SILICON
Transistor type	GENERAL PURPOSE SMALL SIGNAL
Minimum DC amplification factor	125
Rated crossover frequency	150 MHz

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DONGGUAN NANJING ELECTRONICS LTD.,

SOT-23 Plastic-Encapsulate Transistors

BC856A, B

BC857A, B,C

BC858A, B,C

TRANSISTOR

(PNP)

SOT-23

FEATURES

Ideally suited for automatic insertion

For Switching and AF Amplifier Applications

MAXIMUM RATINGS (T

=25

℃

unless otherwise noted)

Symbol

CBO

Parameter

Value

-80

-50

-30

-65

-45

-30

-5

-0.1

200

150

-65-150

℃

Unit

1. BASE

2. EMITTER

3. COLLECTOR

Collector-Base Voltage

BC856

BC857

BC858

Collector-Emitter Voltage

CEO

BC856

BC857

BC858

EBO

stg

Emitter-Base Voltage

Collector Current –Continuous

Collector Power Dissipation

Junction Temperature

Storage Temperature

BC856A=3A; BC856B=3B;

BC857A=3E;BC857B=3F;BC857C=3G;

BC858A=3J; BC858B=3K; BC858C=3L

DEVICE MARKING

A,May,2011

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