1N4454(DO-35) datasheet, PDF - EEWORLD Datasheet

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1N4454(DO-35): DescriptionRectifier Diode, 1 Element, 0.15A, 75V V(RRM),; CategoryDiscrete semiconductor diode; File Size159KB，2 Pages; ManufacturerGood-Ark; Environmental Compliance; Suzhou Gotech is a complete and comprehensive manufacturer of design, manufacturing, packaging and sales in the domestic semiconductor discrete device diode industry. From the independent development of front-end chips to various packaging technologies of back-end finished products, it has formed a complete industrial chain. The main products include leadless integrated circuit products and discrete device products with the latest packaging technology, automotive rectifier diodes, power modules, rectifier diode chips, silicon rectifier diodes, switching diodes, Zener diodes, micro bridge piles, military fuses, photovoltaic bypass modules, etc., with a total of more than 50 series and more than 1,500 varieties. The products are widely used in many fields such as aerospace, automobiles, green lighting, IT, household appliances and power supply devices for large equipment. Design and develop silver paste for solar cells and various electronic pastes, and develop and mass produce various new sensors in the field of the Internet of Things.

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1N4454(DO-35) Overview

Rectifier Diode, 1 Element, 0.15A, 75V V(RRM),

1N4454(DO-35) Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Good-Ark
Reach Compliance Code	compliant
ECCN code	EAR99
Configuration	SINGLE
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	1 V
Maximum non-repetitive peak forward current	0.5 A
Number of components	1
Maximum operating temperature	175 °C
Maximum output current	0.15 A
Maximum repetitive peak reverse voltage	75 V
Maximum reverse recovery time	0.004 µs
surface mount	NO

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1N 4454

Small-Signal Diode

Fast Switching Diode

Features

Silicon Epitaxial Planar Diode

Fast switching diode

Mechanical Data

Case: DO-34, DO-35 Glass Case

Weight: approx. 0.13g

Maximum Ratings and Thermal Characteristics

=25

C unless otherwise noted.)

Parameter

Reverse voltage

Peak reverse voltage

Maximum average rectified current half wave rectification

with resistive load at T

amb

=25

C and f>50Hz

(1)

Surge forward current at t<1s and T

=25

Maximum power dissipation at T

amb

=25

Maximum junction temperature

Storage temperature range

(1)

Symbol

F(AV)

FSM

tot

Limit

100

150

500

175

-65 to +175

Unit

Volts

Electrical Characteristics

=25

C unless otherwise noted.)

Parameter

Maximum forward voltage drop at I

=10mA

Leakage current

at V

=50V

at V

=75V

Symbol

(BR)R

tot

η½

Min.

100

0.45

Max.

1.0

100

2.0

4.0

350

Unit

Volt

Volts

C/W

Reverse breakdown voltage tested with 100

A pulses

Capacitance at V

=0V

Reverse recovery time

from I

=10mA to I

=1mA, V

=6V, R

=100

Ω

Thermal resistance junction to ambient air

(1)

Rectification efficiency at f=100MHz, V

=2V

Notes:

1. Valid provided that leads at a distance of 8mm from case are kept at ambient temperature

622

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