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ER2006CT_T0_00001

Description
Rectifier Diode, 1 Phase, 2 Element, 10A, 600V V(RRM), Silicon, TO-220AB,
CategoryDiscrete semiconductor    diode   
File Size124KB,4 Pages
ManufacturerPANJIT
Websitehttp://www.panjit.com.tw/

PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values ​​include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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ER2006CT_T0_00001 Overview

Rectifier Diode, 1 Phase, 2 Element, 10A, 600V V(RRM), Silicon, TO-220AB,

ER2006CT_T0_00001 Parametric

Parameter NameAttribute value
MakerPANJIT
Reach Compliance Codenot_compliant
ECCN codeEAR99
Other featuresLOW POWER LOSS
applicationEFFICIENCY
Shell connectionISOLATED
ConfigurationCOMMON CATHODE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.7 V
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
Maximum non-repetitive peak forward current150 A
Number of components2
Phase1
Number of terminals3
Maximum operating temperature150 °C
Minimum operating temperature-50 °C
Maximum output current10 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Maximum repetitive peak reverse voltage600 V
Maximum reverse current1 µA
Maximum reverse recovery time0.05 µs
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE

ER2006CT_T0_00001 Preview

Download Datasheet
ER2000CT~ER2006CT
ISOLATION SUPERFAST RECOVERY RECTIFIER
VOLTAGE
FEATURES
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-O.
Flame Retardant Epoxy Molding Compound.
• Exceeds environmental standards of MIL-S-19500/228
• Low power loss, high efficiency.
• Low forward voltage, high current capability
• High surge capacity.
• Super fast recovery times, high voltage.
• Epitaxial chip construction.
• Lead free in comply with EU RoHS 2011/65/EU directives
50 to 600 Volts
CURRENT
20.0 Amperes
MECHANICAL DATA
• Case: TO-220AB Molded plastic
• Terminals: Lead solderable per MIL-STD-750, Method 2026
• Polarity: As marked.
• Standard packaging: Any
• Weight: 0.0655 ounces, 1.859 grams.
MAXIMUM RATING AND ELECTRICAL CHARACTERISTICSS
Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive loa d.
For capacitive load, derate current by 20%
PARAMETER
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Current at T
C
=90
o
C
Peak Forward Surge Current : 8.3ms single half sine-wave
superimposed on rated load (JEDEC method)
Maximum Forward Voltage at 10A
Maximum DC Reverse Current at Rated DC Blocking
Voltage
Maximum Reverse Recovery Time (Note 2)
Typical Junction Capacitance (Note 1)
Typical thermal Resistance (Note 3)
Operating Junction and Storage Temperature Range
T
J
=25
O
C
T
J
=100
O
C
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
I
R
ER2000CT
ER2001CT
ER2001ACT
ER2002CT
ER2003CT
ER2004CT
ER2006CT
UNITS
V
V
V
A
A
50
35
50
100
70
100
150
105
150
200
140
200
20
150
300
210
300
400
280
400
600
420
600
0.95
1
500
35
85
3
-50 to +150
1.3
1.7
V
A
t
rr
C
J
R
Jc
T
J
,T
STG
50
100
ns
pF
O
C/W
O
C
NOTES:
1. Measured at 1 MHz and applied reverse voltage of 4.0 VDC.
2. Reverse Recovery Test Conditions: I
F
=.5A, I
R
=1A, Irr=.25A.
3. Both Bonding and Chip structure are available.
January 17 2013-REV.03
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